低维AlGaN异质界面微结构及其极化调控研究

项目名称： 低维AlGaN异质界面微结构及其极化调控研究

项目编号： No.11274029

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 王如志

作者单位： 北京工业大学

项目金额： 95万元

中文摘要： 低维铝镓氮（AlGaN）纳米结构作为新一代光电器件核心，引发了人们的研究热潮。界面微结构特性设计及其极化调控是实现高性能低维AlGaN功能器件的关键。本项目将围绕低维AlGaN异质界面特征，采用结构设计、性能模拟与实验验证相结合的方法，重点研究低维AlGaN典型结构（GaN/AlN与GaN/Al0.5Ga0.5N量子阱、量子线及量子点）非理想异质界面的极化状态、微观特征及形成机制；进一步研究外场（压力、温度等）诱导下低维AlGaN结构变化（相变）过程中界面微结构演化机制及其对极化调控的影响规律。通过系统地研究异质界面微结构与极化调控二者间的相互依赖关系，明晰AlGaN的结构、尺度、杂质及缺陷影响界面特性的物理实质，澄清低维AlGaN中纳米结构界面极化调控的行为规律；提出通过异质界面极化设计实现低维AlGaN结构电学与光学性能提高的有效预测模型、实验手段及技术方案。

中文关键词： 铝镓氮；低维纳米结构；界面；极化；调控

英文摘要： Low-dimensional nano-structure aluminum gallium nitrides (AlGaN), as the key materials of a new generation of optical and electrical devices, have attracted much research interests. Heterointerface microstructure of AlGaN and its polarization modulation are the key problems to achieve high-performance unction devices. The project will focus on the characteristics of low-dimensional AlGaN heterojunction interface with the method of combining the structural design, performance prediction and Experimental verification. For some typical AlGaN structures (Such as, GaN/AlN or GaN/Al0.5Ga0.5N quantum wells, quantum wires and quantum dots), their polarization state of the non-ideal heterojunction interface, the microscopic characteristics and its formation mechanism will be carefully examined; Further studies on interfacial microstructure evolution and its polarization modulation will be executed during the process of the AlGaN structural change (phase change) induced by the external field (pressure, temperature, etc.). By systematic analysis of the correlations between interfacial microstructure and polarization modulation, it will clarify the physical essence of the effects of the structure, scale, impurities and defects of AlGaN on the interfacial characteristics, and it will find out the controllable behavior of the

英文关键词： AlGaN；Low-dimensional nanostructure；interface；ploarization；modulation