功率SiC-JBS器件可靠性机理研究

项目名称： 功率SiC-JBS器件可靠性机理研究

项目编号： No.61306092

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 钱钦松

作者单位： 东南大学

项目金额： 25万元

中文摘要： 碳化硅材料的耐高压和抗干扰特性使得碳化硅基结势垒肖特基（Silicon Carbide - Junction Barrier Schottky，简称SiC-JBS）器件在功率电子系统"大功率、高频、小型化"的发展方向上发挥了重要作用。近年来，SiC-JBS器件的开关特性、电流密度及击穿能力等电学特性已大幅提升，但高温、高压、大电流的应用环境使可靠性问题成为限制其进一步发展的瓶颈。目前，关于SiC-JBS器件在系统应用中出现的诸多可靠性问题的退化机理及模型的研究还较少，有些甚至根本没有涉及。本课题将根据具体系统应用条件，对SiC-JBS器件工作过程中面临的正向大电流应力、高温反向偏压应力、反向灌电流应力及高dV/dt应力下的退化机理展开深入研究，并在此基础之上建立一套用于SiC-JBS器件实际工作条件下的寿命预测模型，进而为研制高可靠SiC-JBS器件及相关应用系统打下理论基础。

中文关键词： 碳化硅结势垒肖特基二极管；退化机理；热载流子效应；退化寿命模型；

英文摘要： Because of the high critical electric field and high anti-interference characteristics of Silicon Carbide, the Silicon Carbide - Junction Barrier Schottky (SiC-JBS) device will play an important role in the high-power, high-frequency and miniaturization regions. In recent years, the electrical performance of the SiC-JBS device, such as the switching speed, the electric current density, the breakdown voltage and so on, has been improved dramatically, but the reliability issues are still serious due to the severe operation environment with high temperature, high voltage and large current. However, the research about the reliability of SiC-JBS device is less reported. Based on the practical operation environment, this project will investigate the degradation mechanism of the SiC-JBS device under large current stress, high temperature and reverse bias stress, repetitive reverse current stress and high dV/dt stress conditions. In term of these research results, a complete lifetime model of the SiC-JBS device under the operational condition will be established. This project will make the theoretical foundation for developing the high reliable SiC-JBS device and the related power integrated circuits with long lifetime.

英文关键词： SiC Junction Barrier Schottky diode；degradation mechanism；hot-carrier effect；SiC-JBS lifetime model；