白光LED用硅基氮氧化物荧光材料的制备、性能及发光机理研究

项目名称： 白光LED用硅基氮氧化物荧光材料的制备、性能及发光机理研究

项目编号： No.11204258

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学I

项目作者： 谢安

作者单位： 厦门理工学院

项目金额： 30万元

中文摘要： 硅基氮氧化物荧光粉的制备需要高温、高压等苛刻的条件，这极大地制约了该系列荧光粉的生产和应用，也使得新型含氮材料的开发极为困难。因此，研究常压较低温度下制备出性能优良的硅基氮氧化物荧光粉，显得尤为紧迫和必要。 本课题研究以溶胶?凝胶法制备硅酸盐为前驱体的两步反应法常压下合成白光LED用高效硅基氮氧化物MSi2O2N2: Eu2+(M=Ca,Sr,Ba)荧光粉的制备技术；通过对硅基氮氧化物的晶粒生长机理和相变过程的研究，揭示微观结构的调控对粉体颗粒形貌与发光性能的影响；研究阳离子取代/置换、O/N比等变化对发光离子配位环境的影响规律，深入探讨硅基氮氧化物多激活离子共掺的能量传递机制及出射光谱的裁剪，实现提高粉体的发光效率和荧光光谱调控；阐明硅基氮氧化物的发光机理并确定晶体相变过程与发光强度之间的关系，为新型荧光材料的开发提供理论基础，促进白光LED产业的发展，具有重要的理论意义和实际价值。

中文关键词： 硅基氮氧化物；两步反应法；光谱调控；能量传递；白光LED

英文摘要： Synthesis of silicon nitrogen oxide luminescent materials generally needs active raw materials and harsh terms such as high temperature and pressure due to their inactivity. This shortcoming does not only restrict the industrialization of this series of phosphors but also make it very difficult to develop new luminescent materials in this cluster. Thus it is very necessary and urgent to develop a new method which can be manipulated in a lower high temperature and pressure. In the present item, sol-gel method, having silicates as precursors, will be used to synthesize silicon nitrogen oxide luminescent materials MSi2O2N2: Eu2+(M = Ca, Sr, Ba) under normal pressure. We will investigate grain growth mechanism and phase transition of these phosphors in order to disclose effect of the adjustment of microstructure on the morphology and luminescence properties of prepared phosphors. The effect of cation substitution and the change of environmental atmosphere on the coordination lattice of luminescent ions will also be investigated. Energy transfer and quantum cutting in these phosphors will be explored in detail to improve the luminescence properties of these phosphors. Luminescence mechanism and the relationship of phase transition and luminescence intensity will be clarified. The actualization of this item can not o

英文关键词： Silicon nitrogen oxide；two-step chemical method；spectrum adjustment；energy transfer；white light-emitting diodes