基于GaN纳米线铁电场效应晶体管及相关电性能

项目名称： 基于GaN纳米线铁电场效应晶体管及相关电性能

项目编号： No.61204116

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 陈义强

作者单位： 工业和信息化部电子第五研究所

项目金额： 27万元

中文摘要： 随着器件向小型化、高集成、高密度存储和超快传输方向发展,以半导体纳米线为导电沟道的纳电子器件成为信息高新技术研究前沿和热点之一。本项目以具有宽带隙、高电子迁移率、高热导率和抗辐射等优点的GaN半导体纳米线为导电沟道，设计铁电/基片复合层式背栅，自组装GaN纳米线铁电场效应晶体管，并探索其电学性能及相关可靠性。重点研究三个关键科学问题：纳电子器件微纳加工及表征测试技术；基于纳米线铁电场效应晶体管温度相关的电学特性与内在机制；基于纳米线铁电场效应晶体管辐照相关的电学特性与物理机制。一方面发展表征基于纳米线铁电场效应晶体管相关电学特性的测试技术；另一方面建立材料学、半导体物理学和器件可靠性工程相互交叉的理论分析方法，揭示纳电子器件失效的物理机制。本项目符合《国家中长期科学和技术发展规划(2006-2020)》的基础研究和重大科学研究计划，研究结果将为纳电子器件及可靠性研究提供理论和实验基础。

中文关键词： 铁电存储器；铁电场效应晶体管；GaN纳米线；PZT铁电薄膜；自组装

英文摘要： With the development of device micromation, high integration, high storage and high speed, the nanodevices with the conducting channel based on semiconducting nanowire (NW), are attracting a great interest in scientific research of information technology. Due to its excellent properties of direct and wide bandgap, high mobility and thermal stability, and radiation resistance, the GaN NW will be assembled as the conducting channel of ferroelectric field effect transistor (FeFET) with ferroelectric/substrate back-gate, and the electrical characteristics and reliability of the GaN NW-based FeFET will be investigated in this project. In particular, three key issues will be mainly focused on, which are nanofabrication and characterization technology, temperature-dependent electrical properties, and radiation-dependent electrical properties as well as corresponding mechanism. The project will be devoted to experimentally developing nanotechnology for the characterization of the electrical characteristics and reliability of the GaN NW-based FeFET, and on the other hand, it will be also devoted to building the thought system info on the basis of the interaction of materials science, semiconductor physics and reliability engineering, in order to discover the failure mechanism of nanodevice. The project refers to the basi

英文关键词： Ferroelectric random access memory；Ferroelectric field effect transistor；GaN nanowire；PZT ferroelectric film；Self-assemble