用于电子突触的"模拟"型忆阻器制备方法及特性机理研究

项目名称： 用于电子突触的"模拟"型忆阻器制备方法及特性机理研究

项目编号： No.61306098

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 闫小兵

作者单位： 河北大学

项目金额： 25万元

中文摘要： "模拟"型忆阻器的阻态变化是一种渐变的过程，这使其具备了神经突触的功能。目前，"模拟"型忆阻器用于电子突触还处于起步阶段，电压或电流信号响应的电导存在波动是主要问题。鉴于此，本项目拟采用磁控和脉冲激光共溅射技术制备0-3维结构忆阻薄膜以实现忆阻器的摸拟特性；拟引入纳米晶来缩小响应电导波动范围、改善忆阻性能以及降低能耗。研究两种结构的纳米晶Si/Ag+Si和金属纳米晶/氧化物结构复合薄膜。其中，共溅射制备金属纳米晶/氧化物薄膜忆阻器文献上尚无报道。系统研究沉积工艺对纳米晶的结构（尺寸、密度和比例梯度等）的影响和纳米晶的微结构对改善忆阻器性能的控制作用，验证其STDP学习行为，并澄清纳米晶忆阻器的物理机制，建立纳米晶材料结构与器件特性之间的物理模型。本项目将有助于我们实现纳米晶复合薄膜结构设计和可控制备，为"摸拟"忆阻器应用于神经系统提供直接的实验支撑和理论依据，具有重要的研究价值和应用前景。

中文关键词： 阻变存储器；忆阻器；物理机制；STDP；纳米晶

英文摘要： The resistive states of "analog" memristor can be changed gradually, which make it implemented in simulating synaptic function of neuron. Currently, the investigation of "analog" memristor is still in its infancy due to the challenge to completely solve the fluctuations in memristive synaptic responses at this stage. In view of this, 0-3 dimensional structure films would be fabricated by cosputtering technique including magnetron sputtering and pulse laser deposition for achieving the property of analog in memristors; Nanocrystals would be introduced for narrowing the fluctuation scope of the conduction for response, improving characteristics of memristors and decreasing the power dissipation. Two kinds of structure: nanocrystal Si/Ag+Si mixture and metal nanocrystals/oxide composite films would be studied and the memritor with metal nanocrystals/oxide film fabricated by cosputtering technique has not been reported in literature. We study the the effects of deposition parameters to the nanocrystals (the shape of particle, size, density, ratio gradient etc.) and the impact of microstructure of nanocrystals materials on the improvement of performance in memristor, verify the STDP learning behaviors, clarify the physics mechanism and establish the theoretical mode of the structures of nanocrystals and the character

英文关键词： resistive switching；memristor；physical mechanism；STDP；nanocrystal