基于垂直多结结构的大功率激光能量接收器

项目名称： 基于垂直多结结构的大功率激光能量接收器

项目编号： No.61275040

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 韩培德

作者单位： 中国科学院半导体研究所

项目金额： 110万元

中文摘要： 基于垂直多结结构的大功率激光能量接收器是由多个垂直于表面的硅pn结串联横向排列而成，其优势在于承受激光功率密度大、单结开路电压高、功率输出与负载匹配、表面无金属栅电极遮挡、光电转换效率高，这对我国航天航空事业、地面及水下国防事业中的大功率激光输能将起到巨大的促进作用。本课题主要涉及光电子大注入下的载流子动力学研究，包括材料电学特性随表面深度的变化、光电导诱发的载流子表层聚集、Auger复合加剧和欧姆接触局部自发改善；涉及硅垂直单结结构参数（结深、杂质浓度分布）与单结特性（开路电压、短路电流、光电转换）之间的模拟计算，以及单结单元的制备与测试；涉及轻掺深扩、金属化连接、横向切片、端面去损、钝化减反、电极焊接等工艺研究；涉及硅垂直多结芯片散热、接收器输出功率特性及能量转换效率的测试分析；涉及接收器中光生载流子产生、分离、输运和收集的过程分析，以及开路电压随激光功率增强而提高的机理研究。

中文关键词： 垂直多结；光伏电池；大功率光电转换；；

英文摘要： Large power laser energy receiver is composed of many perpendicular pn junctions with horizontal series arranging. Its advantages are on bearing large laser power, being high open circuit voltage, matching with load-power, having no metal-grid shading, becoming high solar voltaic efficiency. This will play an important role in laser energy transmission in Chinese space and terrestrial and in-water applications. This project concerns the investigation of carrier dynamics under high photo-electron injection, including dependence of silicon electrical properties on surface depth, carrier concenrtration toward surface induced by photo-electron conductor, Auger combination increasing, Ohmic contact locally improving. This project concerns computer simulation on the relationship between silicon perpendicular pn junction structure parameters (junction depth, dopant concentration distribution) and opto-electron properties (open circuit voltage, short circuit current and opto-electron transform)，preparasion and analysis of single junction and unit. This project concerns technology research of weak and deep doping, metallized bonding, wire cutting, surface damage removing, surface passivation and surface light-reflection reduction, electrode welding. This project concerns measurement analysis on heat dissipation, power tr

英文关键词： vertical multi-junctions；light voltage cell；high power opto-electron transfer；；