量子点超辐射发光管材料与器件研究

项目名称： 量子点超辐射发光管材料与器件研究

项目编号： No.60876086

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 金鹏

作者单位： 中国科学院半导体研究所

项目金额： 43万元

中文摘要： 本项目利用自组装量子点材料尺寸非均匀导致的宽发光光谱这一本征特性，制备1.3微米波段、0.85微米波段和1.55微米波段宽增益谱半导体光电子材料，以及研制相应波段的量子点超辐射发光管。本项目执行期间，对包括自组装量子点分子束外延生长、量子点材料与量子点超辐射发光管理论模拟、量子点尺寸非均匀性调控、量子点材料和超辐射发光管器件结构设计、量子点材料的光学性质、超辐射发光管器件工艺在内的整个环节进行了系统的研究。建立了包含自组织量子点的增益谱、自发发射谱、行波方程、速率方程等在内的较为全面的量子点超辐射管器件模型；理论上提出了一种光栅耦合表面发射的超辐射发光二极管结构；生长出了0.85微米波段、1.3微米波段和1.55微米波段宽增益谱量子点材料；在国际上首次制备出了0.85微米波段InAlGaAs/AlGaAs短波长超辐射发光管器件，最大脉冲输出功率为18mW；研制出1.3微米波段InAs/InGaAs/GaAs量子点超辐射发光管器件；制备出1.55微米波段InP基量子点超辐射发光管器件结构。

中文关键词： 自组织量子点；超辐射发光管

英文摘要： Boardband-spectral quantum-dot (QD) materials and quantum-dot superluminescent diodes (SLDs) emitting in the 0.85 um band, 1.3 um band and 1.55 um band, have been studied in this project. Here, intrinsical non-uniformity of size distribution of the self-assembled quantum dots is used to enhanceing the spectral bandwidth of the quantum dot materials and the superlumincescent diode devices. The growth of self-assembled quantum dots, the controll of the size distribution non-uniformity, the design of the material structure, the simulation of SLD devices,the opticaland structural propertices, the device processes, as well as the device characterization have been performed in the project. QD-SLD device model including gain spectrum, spontaneous emissing spectrum, travelling wave equation and rate equation,has been established. A suface-emitting SLD device structure with a circular grating has been proposed. QD materials emitting at 0.85 um band, 1.3 um band and 1.55 um band have been fabricated. InAlGaAs/AlGaAs QD-SLD emitting in the 0.85 um band with the 18 mW output power has been prepared at the first time in the world. 1.3 um band QD-SLD device also has been prepared. InP-based 1.55 um QD-SLD device structure has been fabricated.

英文关键词： self-assembled quantum dots; superluminescent diodes