单层石墨烯边缘局域电子特性表征及二维场发射电子源应用探索

项目名称： 单层石墨烯边缘局域电子特性表征及二维场发射电子源应用探索

项目编号： No.51272293

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 佘峻聪

作者单位： 中山大学

项目金额： 80万元

中文摘要： 石墨烯是一种新型场发射材料，有可能在新型真空微纳电子器件上获得应用。石墨烯的场发射特性表征、机理研究及电子源研制是真空纳电子领域的一个热点。本课题拟利用高分辨场发射显微镜及发射电子能谱分析等技术手段，在单原子尺度上研究单层石墨烯边缘的微观局域电子特性，包括局域I-V特性、微区电子发射像、发射电子能谱，边缘手性对石墨烯边缘电子发射的影响，边缘悬挂官能团(-O, =O, -H, -N, -CO, -OH, =N-H)对电子发射的影响规律。结合实验研究结果，发展相关的理论，建立单层石墨烯边缘场发射物理模型。在上述工作基础上，发展优化单层石墨烯边缘电子发射均匀性的技术途径，探索单层石墨烯边缘作为二维线状电子源应用于相干电子源器件和低压电子束纳米光刻的可能性。研究结果可为理解石墨烯边缘微观局域电子特性提供重要实验证据，对促进石墨烯在新型纳米电子器件上的应用具有实用意义。

中文关键词： 石墨烯阴极；场致电子发射；局域电子特性；悬空石墨烯微纳加工；有源控制集成器件

英文摘要： Graphene is a new cold-cathode material owns promising prospect for application in vacuum micro/nano electronic devices. The preparation, characterization and application of graphene based field emission electron sources have gained intensive concern. In this project, high resolution field emission microscopy (FEM) and field emission energy distribution (FEED) techniques are employed for investigating the field emission properties and the related physical mechanisms of the single-layer graphene in single-atom scale. The work focuses on the physical aspects of the local current-voltage (I-V) characteristics, field emission energy distributions, chirality-dependence of the field emission properties and the effect of the functional groups (-O, =O, -H, -N, -CO, -OH, =N-H) on the electron emission. Realted physcal model will be proposed. Based the findings, techniques will be developed for optimizing the filed emission performance of the graphene. Studied will perform on employing the potential of the single-layer graphene as a two-dimensional linear cohenence electron source and its application for low voltage electron beam nanolithography. The work provides new physics and novel application of the graphne.

英文关键词： graphene cathode；field electron emission；local electronic properties；Micro/nano fabrication of suspended graphene；actively controlled integrated devices