项目名称: 一维III族氮化物半导体微腔结构中激子极化激元和受激辐射研究
项目编号: No.61274003
项目类型: 面上项目
立项/批准年度: 2013
项目学科: 无线电电子学、电信技术
项目作者: 刘斌
作者单位: 南京大学
项目金额: 80万元
中文摘要: 该申请在总结09年青年基金项目的研究思路和已取得的成果基础上,提出了设计和制备一维纳米柱III族氮化物微腔结构的创新研究思路,以获得高品质(Q)因子的III族氮化物微腔结构,实现微腔中激子极化激元在室温下受激辐射为研究目标。项目紧密围绕一维III族氮化物纳米柱结构制备技术和低维结构中激子-光子耦合物理过程,重点研究GaN基板的纳米图形制备及转移,GaN在纳米尺寸上选择外延机制,纳米柱微观结构与发光空间分布的关联,分布式布拉格反射镜(DBR)结构与量子阱有源层的集成与匹配,微腔结构中激子极化激元的拉比分裂,受激辐射现象和产生阈值条件,为制备高效率、低阈值的GaN基半导体激光器提供新途径。
中文关键词: 一维III族氮化物半导体;微纳加工技术;MOCVD生长技术;光电子器件;激光器
英文摘要: This project suggests designing and fabricating one-dimension(1D) III-nitride semiconductor nanorods, as to realize high Q-factor III-nitride based microcavities, polariton lasing in this 1D microcavities at room temperature, which based on the research track and results of Youth NSFC Project submitted in 2009. The research focus on the fabrication of 1D III-nitride nanorods and the exciton-photon coupling process in the 1D microcavities. It investigates the nano-patterning of GaN template, the selective growth mechanism of GaN nanorods, the correlations between microstructure and emission properties of multiple quantum wells(MQW) in the top and side of nanorods, the assembly and optical matching between distributed Bragg reflector(DBR) and MQW active layers. It investigates the Rabi splitting of exciton polaritons, lasing phenomenon and threshold condition of the 1D III-nitride microcavities, which provides one new method to achieve high efficiency, low threshold GaN-based lasers.
英文关键词: One dimensional III-nitride semiconductors;Nano-fabrication technology;MOCVD growth technology;Optoelectronic devices;Lasers