基于雾化流动化学气相沉积法制备高均匀性碳纳米管薄膜晶体管器件的研究

项目名称： 基于雾化流动化学气相沉积法制备高均匀性碳纳米管薄膜晶体管器件的研究

项目编号： No.51502304

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 孙陨

作者单位： 中国科学院金属研究所

项目金额： 20万元

中文摘要： 碳纳米管作为一维纳米材料的典型代表，具有优异的力学、电学和光学性质，基于碳纳米管的薄膜晶体管在柔性电子领域具有广阔的应用前景。然而，通常获得的薄膜晶体管的器件均匀性较差，限制了晶体管电路集成度和可靠性的提高，因此目前碳纳米管集成电路的规模化应用仍未实现。本项目提出采用雾化流动化学气相沉积（CVD）法制备高均匀性碳纳米管薄膜，并利用喷墨打印技术构建大面积、性能均一的碳纳米管薄膜晶体管。提高优化雾化流动CVD法的工艺参数，建立催化剂与合成的碳纳米管性质的关联，提高碳纳米管薄膜的均匀性；选择不同衬底材料并对衬底表面进行修饰和改性，实现均匀的碳纳米管薄膜转印和电极制备；针对超过2000个薄膜晶体管器件为基础进行性能测试和统计分析，揭示影响碳纳米管薄膜晶体管均匀性的关键因素与规律，为实现高均匀性的碳纳米管薄膜晶体管器件的规模化制备提供科学参考。

中文关键词： 碳纳米管；化学气相沉积；薄膜晶体管；均匀性

英文摘要： As a typical candidate of one-dimensional nano-material, carbon nanotube has the extraordinary mechanical, electrical and optical properties so that the thin-film transistor based on carbon nanotube has a broad application prospect in the field of flexible electronics. However, the uniformity of the fabricated thin-film transistors is usually not good, which is the limitation to improve the integration and reliability of transistor circuits, thus large-scale application of carbon nanotube integrated circuits has not been realized so far. In this proposal, we propose the synthesis of high-uniformity carbon nanotube thin films based on the mist flow chemical vapor deposition (CVD) in order to fabricate carbon nanotube thin-film transistors with large-scale and uniform performances by using inkjet-print technique. The uniformity of carbon nanotube thin film is improved through the establishment of the relationship between the catalyst particles and properties of as-synthesized carbon nanotubes as well as optimizing the parameters of the mist flow CVD; the transfer of uniform carbon nanotube thin film and fabrication of electrodes are realized through the surface modification of various substrates; the key factors governing the uniformity of carbon nanotube thin-film transistors are clarified through the characterization and statistical analysis of the performances of more than 2000 thin-film transistors. This study will pave the way for scalable fabrication of high-uniformity carbon nanotube thin-film transistor devices.

英文关键词： Carbon nanotube;Chemical vapor deposition;Thin-film transistor;Uniformity