InGaN/GaN多量子阱绿光LED内量子效率及响应频率研究

项目名称： InGaN/GaN多量子阱绿光LED内量子效率及响应频率研究

项目编号： No.61504044

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 徐明升

作者单位： 山东大学

项目金额： 23万元

中文摘要： 红绿蓝三基色(RGB)白光LED具有显色性能好、理论流明效率高、响应速率快等优点，是照明通信共用白光LED最理想的制备方法。但是其中的绿光LED量子效率和响应速度较低，大大限制了它的广泛应用。.本课题计划采用MOCVD技术生长绿光LED外延片并进行变温光致发光谱、透射电子显微镜、电流-电容曲线等测试来表征其量子效率和频率特性。设计新型量子阱结构（如应力释放超晶格量子垒、 δ 势垒量子阱等）及P型结构(如p-InGaN导电层等)并优化厚度、掺杂浓度等参数，同时提高绿光LED的量子效率和响应频率。本课题还计划采用Apsys软件数值计算GaN基LED的能带结构、自发辐射速率分布及内量子效率等参数,结合实验测试结果，确定外延结构参数影响绿光LED量子效率和响应频率的物理机制。课题完成后，将会提高绿光LED的量子效率和响应频率，推动RGB白光LED在高品质照明及高速可见光通信领域的发展。

中文关键词： 绿光发光二极管；金属有机化学气相沉积；内量子效率；响应频率；数值计算

英文摘要： Red-green-blue tricolor (RGB) white light-emitting diode (LED) has many advantages, such as good color rendering, high theory luminous efficiency, fast response frequency and so on. It is the best manufacture method of white LED for lighting and communication. However, the luminous efficiency and response rate of GaN green LED are still too low, which obviously limit the widely use of RGB white LED..On this project, we will grow GaN based green light-emitting diode by metal-organic chemical vapor deposition (MOCVD). The quantum efficiency and frequency properties are measured by temperature-dependence photoluminescence, transmission electron microscope and current- capacitor curves. We will improve the internal quantum efficiency and response frequency of the green LED by designing many novel multiple-quantum well (MQW) structures(such as strain release super-lattice, short period strain release quantum barrier, δ barrier quantum wells) and p-type GaN (such as p-InGaN conductor layer). At the same time, we will calculate the energy band structure, internal quantum efficiency of the GaN based LED by Apsys software. By combining the experimental data and the calculation results, we will clarify the physical mechanism of the internal quantum efficiency（IQE）and response frequency dependence on the epitaxial parameters of the green LED..After finishing the project, we will understand the dependence relationship of IQE and frequency of GaN based green LED. The luminous efficiency and modulation bandwidth of the green LED will be improved, which will promote the widely use of RGB white LED in high quality lighting and high speed visible light communication fields.

英文关键词： green light-emitting diode;metal-organic chemical vapor deposition;internal quantum efficiency;response frequency;numerical simulation