碲化铋基纳米结构材料的电、声输运性能的协同调控

项目名称： 碲化铋基纳米结构材料的电、声输运性能的协同调控

项目编号： No.51271133

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 蔡克峰

作者单位： 同济大学

项目金额： 80万元

中文摘要： 用自主创新的气相诱导还原法合成碲化铋基六方纳米片，通过调节合成工艺参数，分析研究该种六方片的生长过程，揭示其生长机制。通过理论计算阐明硫掺杂对碲化铋的能带结构、电子态密度的影响。匀胶与气相诱导还原技术相结合制备适量硫掺杂的碲化铋基纳米结构热电薄膜，调节制备工艺参数，使膜内的纳米晶沿着与基面平行方向生长，薄膜均匀致密；揭示薄膜的形成和生长机制及其组分、显微结构对热电输运性能的影响规律。硫掺杂的碲化铋基六方纳米片的合成及致密化获得纳米结构块体材料，阐明硫掺量对其显微结构和热电性能的影响。将湿化学法制备的铜纳米粉或铋纳米粉与碲化铋基六方纳米片以一定比例混匀后致密化，揭示铜或铋纳米夹杂物对材料的热电性能的影响；通过调节烧结工艺参数、优化组分及显微结构（包括纳米晶大小及取向，纳米夹杂物大小及浓度），实现碲化铋基材料的电、声输运性能的协同调控；该研究将促进碲化铋基热电薄膜和块材的研究及其实用化进程。

中文关键词： 碲化铋；热电；掺杂；机理；化学合成

英文摘要： In this proposal, a self-developed gas-induced reduction method will be used to synthesize bismuth telluride based hexagonal nanoplates. By adjusting the synthesis conditions and examining the growth process of the nanoplates，their growth mechanism will be proposed. The effect of sulphur doping on the band structure and density of states of bismuth telluride will be theoretically studied. Different amounts of sulphur-doped bismuth telluride based nanostructured films will be prepared by combining spin-coating and gas-induced reduction method. Highly textured, homogeneous, and dense films will be prepared by adjusting the synthesis conditions. The formation mechanism of the films and the relation between composition, microstructure, and thermoelectric properties of the films will be proposed and studied, respectively. Different amount of sulphur-doped bismuth telluride based hexagonal nanoplates will be consolidated to obtain dense nanostructured bulk materials. The effect of sulphur doping on the microstructure and thermoelectric properties will be studied. Cu or Bi nanopowders prepared by wet chemical method will be mixed with n-type bismuth telluride based nanoplates and consolidated. The influence of copper or bismuth nanoinclusions on the thermoelectric properties of the materials will be studied. The therma

英文关键词： Bismuth telluride；thermoelectric；doping；mechanism；chemical synthesis