超薄、晶格匹配InAlN/GaN异质结构电学性质及其调控规律

项目名称： 超薄、晶格匹配InAlN/GaN异质结构电学性质及其调控规律

项目编号： No.61404004

项目类型： 青年科学基金项目

立项/批准年度： 2015

项目学科： 信息四处

项目作者： 桑玲

作者单位： 北京大学

项目金额： 9万元

中文摘要： GaN基半导体由于其大禁带宽度、强击穿电场、高电子漂移速度、耐高温、抗辐照等优异物理、化学性质，在高功率、高频、高温电子器件方面有不可代替的应用，而超薄、晶格匹配InAlN/GaN异质结构（简称Thin-InAlN异质结构）是研制GaN基毫米波，乃至更高频电子器件的主流发展方向。本申请项目针对超薄、晶格匹配这两个主要特点，在实现高质量Thin-InAlN异质结构的金属有机化学气相沉积(MOCVD)的基础上，采用变温Hall测量、变频变温电容-电压谱(C-V)，高温深能级瞬态谱（HT-DLTS）等富有特色的研究方法，系统探索Thin-InAlN异质结构中的自发极化特性、二维电子气(2DEG)输运特性、栅漏电机制、表面局域态及其MOCVD原位钝化等关键问题，为解决基于Thin-InAlN异质结构的高电子迁移率晶体管（HEMT）器件的短沟道效应、漏电控制和电流崩塌等难题提供科学依据和解决方案。

中文关键词： GaN基；异质结构；2DEG；输运特性；表面态

英文摘要： GaN-based semiconductor has a widespread application in high frequency, high power and high temperature electronic devices due to its excellent physical and chemical properties, such as wide band gap,high breakdown field and high electron drift velocity and so on. The ultra-thin, lattice-matched InAlN/GaN heterostructure (referred to as Thin-InAlN heterostructures ) and high electron mobility transistor (HEMT) are the major direction to develop the GaN-based high-frequency devices. Based on achieving high quality Thin-InAlN heterostructures by metal organic chemical vapor deposition (MOCVD) and the use of variable temperature Hall measurements, variable temperature and frequency capacitance-voltage spectrum (CV), high-temperature deep level transient spectroscopy (HT-DLTS) and other distinctive research methods, this project is aiming to explore the spontaneous polarization properties, two-dimensional electron gas (2DEG) transport properties, the gate leakage mechanism, surface localized states and in situ surface passivation of Thin-InAlN heterostructures, etc. As one of the most forefront topics in the current study of wide band gap semiconductor heterostructures and electronic devices, this project not only has important academic significance in the physical aspects of wide bandgap semiconductors, but also ha

英文关键词： GaN-based；heterostructure；2DEG；transport properties；surface states