基于石墨烯/一维硅纳米阵列新型光伏器件的研究

项目名称： 基于石墨烯/一维硅纳米阵列新型光伏器件的研究

项目编号： No.91233110

项目类型： 重大研究计划

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 揭建胜

作者单位： 苏州大学

项目金额： 80万元

中文摘要： 一维硅纳米阵列结构具有陷光效应，且易于构筑径向p-n结，有利于改善器件光吸收效率及载流子分离效率，其在光伏电池中的应用引起广泛关注。但现有一维硅纳米阵列光伏器件主要沿用传统晶硅器件制备工艺，如高温下p-n结扩散或生长，工艺的复杂性对其应用和性能造成限制。本项目提出以石墨烯作为高性能透明电极，在大气及室温条件下，通过简单转移方式与一维硅纳米阵列构成肖特基型或有机-无机杂化p-n结光伏器件。通过阵列结构优化、石墨烯与阵列立体接触等方式，改善石墨烯与阵列接触。进而结合阵列表面修饰与钝化，以及石墨烯电学性能调控等手段，提高光伏器件性能。通过发展硅纳米阵列剥离与转移技术，构筑柔性光伏器件。期望获得转换效率在10-15%之间（其中柔性器件9-12%）的高性能石墨烯/一维硅纳米阵列光伏器件，器件性能具国际先进水平。本项目的实施对于高效、低成本、环境友好的碳/硅复合光伏器件的研究与应用具有重要意义。

中文关键词： 石墨烯；硅纳米结构；异质结；太阳能电池；光电探测器

英文摘要： Recently, photovoltaice devices based on one-dimensional (1D) Si nano-arrays have attracted considerable attention due to the strong light absorption arising from the light trapping effect as well as the radial p-n junction structure formed in the Si nano-arrays, which can greatly facilitate the separation of the photo-generated carriers. However, the complex device fabrication process inherited from the conventional crystal-Si photovoltaic devices, such as high-temperature p-n junction diffusion or growth, will inevitably restricted their practical applications. Herein, we propose to fabricate graphene/Si nano-array hybrid devices via a simple transfer process at room temperature and ambient environment. Two types of photovoltaic devices will be constructed, including graphene/Si nano-array Schottky junction devices and graphene/polymer/Si nano-array organic/inorganic hybrid p-n junction devices. We will focus on the structure optimization of Si arrays, pursue of full contact between graphene and Si arrays, surface modification and passivation of the arrays, as well as tuning the electrical properties of graphene, to improve the device performances. Furthermore, flexible photovoltaic devices will be constructed by peeling off the Si nano-arrays from the etching/growth substrates. It is expected that photovoltai

英文关键词： Graphene；Silicon nanostructures；Heterojunctions；Solar cells；Photodetectors