高质量InNSb长波红外探测材料的MBE生长及微观机制研究

项目名称： 高质量InNSb长波红外探测材料的MBE生长及微观机制研究

项目编号： No.60876059

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 陈平平

作者单位： 中国科学院上海技术物理研究所

项目金额： 38万元

中文摘要： 稀氮窄带半导体InNSb是一种新型长波红外探测材料，但目前很难生长高质量材料，对其基本的性能也了解很少。本项目探索利用分子束外延（MBE）技术生长高质量InSb稀氮半导体及相关的窄带半导体材料，并对相关材料的光电特性作细致研究，具体为： 利用N等离子辅助分子束外延技术，克服N在锑化物掺杂的困难，在InSb衬底上成功生长高质量的InNSb 薄膜和量子阱材料，N组分可达到1.5%,得到适合该材料生长的最佳工艺条件。研究N 在InNSb材料体系中的行为， 并进一步理解InNSb薄膜的微观机理。 克服InSb和GaAs大晶格匹配的困难，在GaAs衬底上成功生长高质量的GaAs 外延单晶薄膜。研究InSb/GaAs的输运特性，发现低温度下反弱局域化效应。 在GaAs衬底上成功生长不同N组分的InNSb薄膜，N组分可达到1.5%。探索利用退火提高材料的晶体质量。 在此基础上成功地在GaAs上生长InAsSb 和InAsNSb薄膜，As的组分可到40%，其红外响应波段达到8－12 微米的长波红外波。对相关的InAsSb/ GaAs的低温磁阻作了细致研究，发现显著的反弱局域化效应.

中文关键词： 分子束外延;InSb; 窄带半导体;红外;磁输运

英文摘要： InNSb dilute nitride semiconductor is a new type of long-wave infrared detection materials.While it is very difficult to grow high quality material, and basic properties of InNSb is not clear up to now. This project has explored the molecular beam epitaxy (MBE) growth of dilute nitride InNSb, and the basic optical and electrical properties of the films and quantum well have been studied in detail. Using N plasma-assisted MBE, InNSb films and quantum well have been grown on InSb substrate under various growth conditions. High quality single crystal InNSb films with N compositions up to 1.5% were grown. The effects of growth parameters on the crystalline quality of the InNSb films were also discussed. The microscopic mechanism of the InNSb films have been studied in detail High-quality GaAs epitaxial thin films have been grown on GaAs substrate. The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated.. InNSb films and quantum wells have been grown on GaAs substrate with N compositions up to 1.5%. Thermal annealing is used to improve the InNSb alloy quality InAsSb and InAsNSb films have also been grown on n GaAs substrate. The infrared response wavelength of InAsSb and InAsNSb films are covered from 8-12 micron infrared waves with As component up to 40%. Magnetoresistance (MR) of the InAsSb / GaAs films with different As composition were measured in detail. Antilocalization (AL) phenomenon was observed at low temperature.

英文关键词： Molecular beam epitaxy;InSb; narrow bandgap semiconductors; infrared;magneto-transport