硅基CeO2薄膜电致发光器件的制备与研究

项目名称： 硅基CeO2薄膜电致发光器件的制备与研究

项目编号： No.61275058

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 衣立新

作者单位： 北京交通大学

项目金额： 83万元

中文摘要： 制备高效的硅基光源仍是当前硅基光电集成领域的核心研究方向之一，这就要求发光材料既有较高的发光效率又能与CMOS工艺兼容。无论是硅基nc-Si发光器件还是硅片键合III-V族半导体器件，又或是稀土离子掺杂硅基SiO2薄膜发光器件均难实现两者兼顾。 本项目拟引入稀土氧化物CeO2取代绝缘基质SiO2制备硅基稀土发光器件，由于CeO2兼具稀土发光材料与半导体材料的双重特性，不但可以增大其它稀土离子在薄膜中的固溶度，提高器件的发光效率，而且可以降低器件工作电压。另外CeO2与单晶Si晶格匹配度低，不存在兼容性问题。本项目拟在单晶Si衬底上外延生长CeO2薄膜，通过控制薄膜厚度、退火温度、退火氛围等优化器件结构，研究Ce3+离子在CeO2薄膜光致发光与电致发光中的作用。通过抑制薄膜中的氧空位导电，制备出高效的硅基CeO2薄膜电致发光器件，并探索掺杂不同稀土离子以获得不同波长的硅基电致发光器件的方法。

中文关键词： CeO2；硅基光源；电致发光；能量传递；

英文摘要： Preparing a silicon based high efficient light emitter which can be monolithically integrated in the chip is one of most essential questions in Silicon-based optoelectronics filed. Different approaches for light emitters have been studied deeply, such as Silicon-based nc-Si devices, III-V semiconductor devices bonding on Silicon wafer and rare-earth-ions-doped in SiO2 films which deposited on silicon. However, it is still hard for these devices to obtain both high luminescence efficiency and good compatibility with CMOS technology. CeO2, one kind of rare earth oxides, is expected to deposit on Silicon wafer to take place SiO2 matrix in this project. The silicon-based CeO2 films devices will be more efficient and much lower threshold voltage than that of SiO2 due to its' higher Solid Solubility of rare earth ions and excellent direct band-gap feature. Furthermore, it is beneficial to obtain high quality epitaxial films due to its' excellent lattice matching with Si wafer. In the project, CeO2 epitaxial layers will be deposited on Si wafer, the role of Ce3+ ions in photoluminescence and electroluminescence of CeO2 films devices will be researched by verifying film thickness, annealing atmosphere, annealing temperature and so on. In order to improve the EL efficiency of these devices, the method of decrease conduct

英文关键词： CeO2；Silicon- based light source；electroluminscence；energy transfer；