p型氧化物透明薄膜晶体管的研制

项目名称： p型氧化物透明薄膜晶体管的研制

项目编号： No.61275022

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 王永生

作者单位： 北京交通大学

项目金额： 86万元

中文摘要： 氧化物TFT由于具有迁移率大、开口率高，被学术界认为是替代目前显示器中应用最广的a-Si TFT的理想候选开关元件。为解决当前p型氧化物TFT光学敏感性和稳定性问题，本项目拟用溅射在ITO玻璃和Si基片上用Li和N共掺ZnO等作沟道层、ZrO2和HfO2等作绝缘层制备TFT。Li和N共掺ZnO，不但可弥补Li离子半径小，减少缺陷密度，而且可提高p型导电性和稳定性，使其TFT性能及光学敏感和稳定性等进一步改善。主要研究制备和退火条件对沟道层和绝缘层及TFT性能的影响；研究绝缘层和沟道层的形貌、结构以及光学性质；研究沟道层的掺杂浓度和导电机制以及载流子输运等电学性能；研究绝缘层的绝缘性能；优选金属、ITO和ZnO掺杂透明电极，以利于改善欧姆接触；用间断间歇退火办法可减少互扩散，提高器件的质量；研究TFT的开关性能以及外界环境对TFT的影响；探索新型TFT结构和TFT制备工艺，提高TFT的性能。

中文关键词： 薄膜晶体管；迁移率；金属氧化物半导体；磁控溅射；

英文摘要： The oxide TFTs may be an ideal candidate to replace the a-Si TFT switching elements in the display area,due to large mobility and the opening rate. To solve the problem p-type oxide TFT optical sensitivity and poor stability, the project is planned that TFTs are prepared by magnetron sputtering on the ITO glass and Si substrates with N and Li co-doped ZnO channel layer,ZrO2 and HfO2 insulation layer.Li and N co-doped ZnO, can not only complement the Li ion radius is small, reduce defect density, but also to improve the p-type conductivity and stability, and TFT performance to further improve the optical sensitivity and stability. Researches effectes of preparation and annealing conditions on the insulating layer and channel layer, and TFT performance.Morphology, structure and optical properties of the insulating layer and channel layer are studied.Researches the doping concentration and the conductive mechanisms of the channel layer, as well as carrier transport and electrical properties.To study insulating properties of the insulating layer.The preferred metal, ITO and ZnO doped transparent electrode in order to help improve the ohmic contact.With intermittent intermittent annealing way can reduce the interdiffusion and improve the quality of the device.Researches performance of the TFT, and effects of the e

英文关键词： Thin film transistor；Mobility；Metal oxide semiconductor；Sputtering；