复合多晶硅栅射频高增益MOSFET的研究

项目名称： 复合多晶硅栅射频高增益MOSFET的研究

项目编号： No.60876062

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 电工技术

项目作者： 陈军宁

作者单位： 安徽大学

项目金额： 31万元

中文摘要： 复合多晶硅栅射频高增益MOSFET采用栅工程的概念，通过对栅的设计， 得到 特性优良的新结构射频MOSFET。所设计的栅有S-gate和D-gate两块并列组成，S-gate用高功函数p多晶硅，D-gate用低功函数n多晶硅，由于靠源端的阈值电压稍高于 漏端的阈值电压，沟道中产生阶梯分布电势，电场沿沟道有一个峰值，载流子可以得到更大的漂移速度，其结果是提高了驱动电流、跨导和截止频率，同时又减小了漂移区末端的最大场强，降低了热电子效应，抑制了短沟道效应。本课题已经得到国家自然科学基金小额预研项目"复合多晶硅栅射频MOSFET"的资助，并已取得相应成果。本课题是该课题的延续性研究，创新之处在于用与CMOS兼容的工艺、同质材料实现了异质栅MOSFET才能具有的优良性能，提高了RF MOSFET高频性能。

中文关键词： 复合多晶硅栅；高增益；高截止频率；MOSFET

英文摘要： The composite polysilicon gate MOSFET with high radio frequency gain is designed according to gate engineering concept, which is a new structure of RF MOSFET with excellent characteristics. The new gate is composed of S-gate and D-gate in parallel connection, S-gate is made by p-polysilicon with high work function and D-gate is made by n-polysilicon with low work function, Threshold near the source is larger than that near the drain, which caused the ladder distribution of electric potential along the channel and there is a electric field peak value, then the carriers may get bigger drift velocity, and we can get the leading results such as: improved drive current, conductance and cut off frequency, and it can reduce the maximum value of the electric field at the end of the drift region , it also can reduce the hot electrons effects and suppress the short channel effects at the same time. This project has been supported by National Natural Science Fund Project(small funding projects) named as "composite polysilicon gate radio frequency MOSFET", and has obtained some corresponding results. This project is the continuing research. The innovation is that this new MOSFET is compatible with current CMOS process, and can obtain excellent heterogeneity material MOSFET performance by using homogeneous material ,which can improve the RF MOSFET high frequency performance.

英文关键词： composite polysilicon gate；high-gain；high cut-off frequency； MOSFET