单原子层过渡族金属（VIB族）硫属化合物的可控制备和光电特性研究

项目名称： 单原子层过渡族金属（VIB族）硫属化合物的可控制备和光电特性研究

项目编号： No.51472008

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 张艳锋

作者单位： 北京大学

项目金额： 83万元

中文摘要： 过渡族金属(VIB族)硫属化合物(TMDC)的体相是间接带隙，但当减薄到一个原子层时则转变成直接带隙。半导体性单原子层TMDC材料,例如MoS2,具备很强的自旋-轨道耦合以及自旋-谷耦合特性，较高的载流子迁移率和优异的光电特性, 已经成为研究谷电子学和构建自旋电子学器件的理想材料，同时在光电子学、传感器件和柔性透明导电薄膜等领域的应用研究中具有广泛的前景，因而成为继石墨烯之后备受关注的二维单原子层的新材料。如果想要展开这类材料的广泛应用探索，高质量的材料制备研究是必须要克服的关键问题。本研究将主要关注单原子层TMDC材料（例如MoS2、WS2、MoSe2等）基于低压化学气相沉积(LPCVD)方法的制备，通过对于生长过程的有效调控，实现大面积、高质量、大畴区或者畴区尺寸可调、严格单层TMDC材料的可控制备和往任意基底上的转移，在此基础上进行材料的精确表征和光电特性研究探索。

中文关键词： 纳米材料；石墨烯；纳米结构；新能源材料

英文摘要： The transition metal dichalcogenides (TMDC, mainly VIB group metals) has a unique indirect to direct energy band transition from bulk state to an atomic layer thick. VIB group semiconductor TMDC materials (like MoS2) usually present strong spin-orbital and spin-valley interactions, high carrier mobility and excellent optical properties, thus contributing ideal systems for exploring the so-called valley electronics and for engineering wide application potential in optoelectronics, atomic layer thin sensors, and transparent electrodes etc. Hereby, one atomic layer thin TMDC has become a hot material followed with graphene. However, for fulfilling the wide application purposes, the batch production of high quality strictly monolayer TMDC should be of fundamental importance, and a lot of experimental efforts have been made in recent days. This research will deal with the synthesis of TMDC (mainly MoS2, WS2, MoSe2 etc.) by using a low pressure chemical vapor deposition (LPCVD)method. Through a careful design of the precursors and the surface chemical reactions, a controlled growth and transfer of monolayer TMDC toward large-area, high quality, and large domain or domain size tunable is expected to be realized.And then, high resolution characterizations and applications of monolayer TMDC mainly in optoelectronics will be discussed.

英文关键词： Nanomaterials;graphene;nanostrucutres;new energy materials