电脉冲调控的铜在硅通孔内自底向上沉积及纳米孪晶生长

项目名称： 电脉冲调控的铜在硅通孔内自底向上沉积及纳米孪晶生长

项目编号： No.51471180

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 祝清省

作者单位： 中国科学院金属研究所

项目金额： 83万元

中文摘要： 三维硅通孔(3D-TSV)是当前最先进的半导体封装技术，金属化填充是TSV实现垂直导通的根本途径。本项目拟针对高深径比TSV内Cu填充的无孔洞化和组织优化等决定三维集成电路性能的关键问题，探索电脉冲条件下Cu在TSV内自底向上电沉积及纳米孪晶生长的机理和方法。研究反向电脉冲对镀液添加剂在TSV孔壁选择性和竞争性吸附行为的调控机理，构建正反向脉冲条件下Cu在TSV内自底向上沉积的机制模型，发展TSV内Cu无孔洞填充的新方法。表征TSV内Cu填充中的纳米孪晶组织，建立电沉积条件与纳米孪晶组织的关系，揭示Cu在自底向上沉积中纳米孪晶生长的机理，建立在TSV填充中生长高密度纳米孪晶组织的方法，构建出高导电性、电迁移抗性、力学和热稳定性的三维互连结构，为发展具有优异电学、力学和热学的三维集成电路探索途径和奠定基础。

中文关键词： 硅通孔；三维互连；电沉积；纳米孪晶

英文摘要： 3D-TSV(Through Silicon Via)is one of the most advanced semiconductor packaging technologies,and the metal filling within TSV is the fundamental way for the 3D interconnect. Regarding the Cu void-free filling and microstructure optimization,those are key issues to determine the performance of 3D integrated circuit in service,this work will investigate the mechanisms of Cu bottom-up electrodepositon and nano-twins formation by the regulation of pulse current.In detail, we will investigate the mechanism of additives selective and competitive adsorption on the wall of TSV by the reverse pulse regulation, establish Cu bottom-up electrodeposition mechanism model under period pulse reverse(PPR), and develop a new approach of void-free filling for TSV using PPR. In addition, we will character the nano-twins structure within the filled Cu in TSV,build up the relationship between the electrodeposition conditions and the nano-twins,reveal the mechanism of nano-twins growth during the bottom-up deposition process,and build up the formula of high density nano-twins growth within the filling of TSV. It is aimed to build a 3D interconnect of high electrical conductivity, electro-migration resistance, mechanical property and thermal stability. The work will explore new approach and lay the foundation for the 3D integrated circuit with excellent electrical, mechanical and thermal performances.

英文关键词： Through silicon via;3D interconnect;Electrodeposition;Nano-twin