基于光子晶体结构的新型混合Si/III-V激光器特性研究

项目名称： 基于光子晶体结构的新型混合Si/III-V激光器特性研究

项目编号： No.61307033

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王海玲

作者单位： 中国科学院半导体研究所

项目金额： 28万元

中文摘要： 混合Si/III-V激光器是硅基光子集成芯片中的关键元器件。此类激光器激光模式的电磁场能量分布与SOI Si波导的宽度有关。Si波导越宽，能量倾向于分布在无源的硅波导上，只有一小部分分布在III-V量子阱有源区中，这不利于模式增益。所以提高有源区中的模式增益与提高Si波导输出耦合效率是矛盾的。光子晶体结构因其可以调控光子而被广泛研究。本项目在混合Si/III-V激光器中引入光子晶体结构，深入分析光子能带、带边模式低群速度、局域态、负折射等物理机制及其与SOI Si波导的作用机制。目的是解决上述矛盾，如在III-V有源层中引入四方晶格光子晶体，其带边模式能产生横向振荡垂直输出的激光。这样，激光模式在Si波导和有源区之间不断被反射，增加了模式与有源区的重叠几率，从而提高有源区的模式增益，而且不影响Si波导输出耦合效率，进而改善了激光器的模式特性。加入光子晶体结构，激光器有望产生新颖的激光现象。

中文关键词： 硅基混合；激光器；倏逝波耦合；晶片键合；端面耦合

英文摘要： Silicon-based compounds are commonly used in commercial optical waveguide devices for applications such as passive optical interconnects.However, the integration of lasers together with Si integrated photonics electronic circuits has proved to be much more challenging.Various ways have been investigated to avoid intrinsic limitation(inderect bandgap) of silicon.A particularly promising approach is molecular bonding of III-V compound semiconductor material on top of a patterned Si-on-Insulator(SOI)substrate. However, this hybrid Si/III-V lasers support a common optical mode, whose electromagnetic field is distributed between the III-V structure and the underlying Si waveguide. In fact, the major part of field is located in the silicon waveguid and only a few percents overlap the multiple quantum wells of the III-V active region. The laser mode is then mainly concentrated in the passive silicon waveguide with detriment of the modal gain. That means that III-V material does not be inefficiently used since there is a trade-off to find between the modal gain and the output coupling efficiency. Photonic crystals, as an effective means of field control, greatly boost the development of semiconductor laser. Photonic crystals can modify the photon states, change the propagation characteristics of optical wave, and promot

英文关键词： hybrid silicon；laser diode；evanescent coupling；wafer bonding；butt-coupling