石墨烯异质结构的可控制备其应用探索

项目名称： 石墨烯异质结构的可控制备其应用探索

项目编号： No.21473124

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 付磊

作者单位： 武汉大学

项目金额： 96万元

中文摘要： 以石墨烯为代表的二维原子晶体材料，由于其独特的量子效应和电学特性，在未来的纳电子器件与集成电路、柔性电子器件、超高灵敏传感器件等新型电子器件的构建中有重要的应用前景。本项目主要发展石墨烯异质结构的可控制备方法，探索石墨烯异质结构在纳电子器件领域的应用基础。通过石墨烯边缘原子掺杂、基底控制、催化剂设计等，制备本征石墨烯/边缘掺杂石墨烯异质结构、石墨烯/其他二维原子晶体材料异质结构。发展与氮、硼掺杂不同的非替位掺杂，探索直接制备边缘光滑石墨烯纳米带的方法；发展选区定位掺杂技术，通过直接制备或后期剪裁，获得异型石墨烯或本征石墨烯/边缘掺杂石墨烯异质结构；直接制备石墨烯/其他二维原子晶体材料层间异质结构，调控异质结构的带隙大小。该项目的开展将为发展具有带隙、高性能石墨烯异质结电子器件奠定基础。

中文关键词： 石墨烯；控制生长；化学气相沉积；异质结构

英文摘要： Due to its unique quantum effects and electrical characteristics, the two-dimensional atomic crystal materials, especially graphene, have shown singnificant application prospects in the next generation nanoelectronic devices and integrated circuits, flexible electronic devices, super sensitive sensors and et al. This project is mainly aming at developing the controllable preparation methods of graphene heterostructure, and exploring the fundamental technologies for its application in the nanoelectronic devices. Graphene heterostructure, including intrinsic/edge-doped graphene and graphene/other two-dimensional atomic crystal materials will be prepared by atoms doping at graphene edges, substrates control and catalysts design. Our aims are to develop the non- substitutional doping methods, different from nitrogen or boron substitutional doping, and explore the direct preparation methods for the smooth-edge graphene nanoribbons; to develop the selected area doping technology and obtain the heterotypical graphene or intrinsic/edge-doped graphene through the direct growth or post-cutting; to directly prepare the inter-layers heterostructure of graphene/other two-dimensional atomic crystal materials and regulate its band gap. This project will lay the foundation for developing graphene heterojunctions electronic devices, which possess tunable band-gap and high performance.

英文关键词： graphene;controlled growth;chemical vapour deposition;heterostructure