周期性液氮冲击中锑化铟焦平面探测器结构可靠性研究

项目名称： 周期性液氮冲击中锑化铟焦平面探测器结构可靠性研究

项目编号： No.61505048

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 张晓玲

作者单位： 河南科技大学

项目金额： 20万元

中文摘要： 周期性液氮冲击中出现的光敏元芯片碎裂和铟柱互连失效制约着红外焦平面探测器的长期应用。在焦平面探测器耐冲击报导中，虽有热失配解决方案的零星描述，但其评价标准尚未确立，定量分析及优化方向鲜有提及。课题以128×128 InSb探测器为研究对象，分3个方面进行研究。1.基于等效建模思想，考虑底充胶黏弹性和铟柱黏塑性形变特征，建立能描述探测器全工艺流程的三维结构模型，以连续三温度点（液氮冲击前300K、冲击后77K、升温至300K）测量的形变幅度及分布特征验证模型正确性；2.分析液氮冲击中层状材料之间的相互作用和形变规律，探讨器件失效诱因，明确芯片减薄和铟柱结构优化对InSb芯片形变的影响程度，提取出热失配解决方案的评价标准；3.建立组件封装模型，定量分析平衡复合物结构对InSb芯片形变的影响程度及作用规律，建立模型预测组件耐冲击次数。这为InSb焦平面探测器及类似结构器件的可靠性设计提供指导。

中文关键词： 红外焦平面探测器；大面阵

英文摘要： Both InSb chip fracture and indium bump interconnection failure appearing in InSb infrared focal plane arrays (IRFPAs) under liquid nitrogen shock cycles, limit its long-term applications. In the thermal cycling reliability of IRFPAs, several approaches for solving the thermal mismatch existed in IRFPAs are ambiguously described. But the evaluation criterion, the quantitative analysis and the optimization are almost not mentioned. So in this project, focusing on the 128×128 InSb IRFPAs, we will research the structural reliability of InSb IRFPAs in three aspects. 1. Basing on the proposed three dimensional equivalent modeling, taking account of the curing process of undefill, employing the viscoelastics characteristic of underfill and the viscoplastic characteristics of indium bump, we will create the structural modeling of InSb IRFPAs. Furthermore, we will adopt the deformation photographs of InSb IRFPAs, which are taken at 300 K, 77 K and 300K in sequential, respectively, to verify the accuracy of the modeling for InSb IRFPAs. 2. Analyzing the interaction and its deformation rule among the layered InSb IRFPAs, which appear in both the process of the underfill curing and the process of InSb chip thinning, we will explore the causes, which cause the InSb chip fracture and indium bump interconnection failure in the liquid nitrogen shock cycles, and infer the evaluation criterion, which is emplyed to solve the thermal mismatch existing in InSb IRFPAs. 3. expanding the created three dimentional modeling of InSb IRFPAs in the encapsulation of InSb IRFPAs assembly, we will explore the deformation rule of InSb chip depending on the balanced composite structure, which is attatched to the bottom surface of silicon readout integrated circuit, and predict the lifetime of InSb IRFPAs assembly enduring liquid nitrogen shock cycles without failure. All these findings will provide the theory for analyzing the structural design and the structural relibility of InSb IRFPAs, or other devices with similar structure.

英文关键词： Infrared focal plane array detector;Large scale array