SOI基40G多波长单片集成接收芯片基础研究

项目名称： SOI基40G多波长单片集成接收芯片基础研究

项目编号： No.61307034

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 张家顺

作者单位： 中国科学院半导体研究所

项目金额： 26万元

中文摘要： 40G多波长接收芯片是短距离数据通信，特别是云计算数据中心核心网络极其重要的一部分，采用WDM技术实现芯片高速多波长接收。EDG更容易实现紧凑型窄信道间隔、多信道数的波分复用/解复用；另一方面，硅基高速Ge探测器是实现单片集成型多波长接收器的关键器件。Ge材料器件与现有的Si CMOS工艺有效兼容方面具有明显优势和极大的潜力。 本项目采用光子晶体反射镜替代EDG中的光栅槽，制作出光子晶体反射阵列EDG，并采用UHV/CVD系统在EDG的输出波导上选区外延生长Ge材料，制作成高效硅基Ge波导探测器，研制出单片集成多波长接收器。单片集成多波长接收器的研制，可以增强我国在硅基光互连系统研究能力，提高我国小型化、高集成度光电子器件的竞争力。

中文关键词： 单片集成；混合集成；光子晶体；刻蚀衍射光栅；阵列波导光栅

英文摘要： 40G multi-wavelength receiver chip is a vital part for short-range data communication, especially for cloud computing data center core network. And higher capacity and integration for transmission channel can be achieved in wavelength division multiplex (WDM) optical interconnection. An extremely important part of the optical interconnection system is monolithic integrated multi-wavelength receiver, which used WDM to realize higher acception speed. A compacted multi and narrow channel interval WDM/ demultiplexer can be achieved by etched diffraction grating (EDG). On the other hand, Si based high speed Ge detector was also an important part of the multi-wavelength receiver, which was compatible with the Complementary Metal-Oxide-Semiconductor (CMOS) process technology. An arrayed photonic crystal mirrors (PCMs) were used as the reflected gratings in the EDG in this research. The Ge detectors were fabricated by ultra high vacuum chemical vapor deposition (UHV/CVD) at the outputs of EDG. And the multi-wavelength receiver was consisted by these two parts. By the research and fabrication of the receiver, the research ability of silicon-based optical interconnect system was strengthened, and the competitive of miniaturization and high level integration optoelectronic devices was improved

英文关键词： monolithic integration；hybrid integration；photonic crystal；eched diffraction grating；arrayed waveguide grating