金属衬底上氧化物薄膜外延生长机理研究

项目名称： 金属衬底上氧化物薄膜外延生长机理研究

项目编号： No.51302225

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 一般工业技术

项目作者： 王耀

作者单位： 西北有色金属研究院

项目金额： 25万元

中文摘要： 金属衬底上取向生长氧化物薄膜属于异质外延问题，其界面结构和外延机理仍不十分清楚，这也是高温超导涂层导体中种子层的选择和制备发展缓慢的主要原因之一。本项目针对氧化物（薄膜）/金属（衬底）异质外延机制尚不清楚的现状，在金属单晶和织构金属基带上通过脉冲激光沉积（PLD）和金属有机沉积（MOD）法生长氧化物薄膜，采用扫描电子显微术（SEM）和透射电子显微术（TFM），结合扫描隧道显微术（STM）和扫描隧道谱（STS）等表征手段来研究金属衬底上氧化物薄膜形核、初期生长以及取向生长行为，从而揭示氧化物（薄膜）/金属（衬底）外延生长机制，这对于阐明在高温超导涂层导体中遇到的种子层外延生长机制和高介电常数薄膜中的界面层形成机制等问题，以及加深对异质外延过程和机理的认识具有重要意义。

中文关键词： 涂层导体；氧化物薄膜；外延生长；表面/界面特性；

英文摘要： The oriented growth of oxide films on metal substrates belongs to a heteroepitaxial growth issue. However, the interface structure and epitaxial growth mechanism of oriented oxide films on metal substrates is still unknown. It is one of the primary reasons that the choice and fabrication of seed layer in high-temperature superconducting coated conductors has been always in late development. Therefore, we will fabricate oxide thin films on metal single crystal substrates and textured metal tapes by pulsed-laser deposition (PLD) and metal organic deposition (MOD) methods in this project. The heteroepitaxial growth mechanism of oxide (film)/metal (substrate) system will be illuminated by investigating nucleation, initial growth and oriented growth behavior of oxide films on textured metallic substrates using scanning electron microscope (SEM) and transmission electron microscopy (TEM) in combination with scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is of great importance to elucidating the epitaxial growth mechanism of seed layers in high-temperature superconducting coated conductors and the formation mechanism of interface layers within oxide film with high permittivity (k) and also to making a good comprehension of heteroepitaxial growth process and mechanism.

英文关键词： coated conductors；oxide thin film；epitaxial growth；surface/interface characteristic；