高调制频率GaN基单芯片无荧光粉白光LED的研究

项目名称： 高调制频率GaN基单芯片无荧光粉白光LED的研究

项目编号： No.61204054

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 路慧敏

作者单位： 北京大学

项目金额： 30万元

中文摘要： 随着GaN基白光LED逐渐趋于成熟并进入实用化阶段，可以与照明功能同时实现的可见光通信技术迅速受到广泛关注。然而由于目前应用的照明LED调制频率低，导致可见光通信系统无法进行高速率传输，现在急需探索能够同时满足照明和通信需求的新型LED光源。本项目拟采用GaN基非规则多量子阱结构，实现具有高调制频率的单芯片无荧光粉白光LED。首先建立分别用于分析GaN基多量子阱结构光谱特性和调制特性的理论模型和数值计算程序。应用该仿真程序分析各种设计参数对GaN基非规则多量子阱结构的光谱和调制特性的影响规律。根据这些影响规律并结合实验，对设计参数进行联合优化，得出既具有优良色温及显色指数，同时也具有较快响应时间的GaN基非规则多量子阱结构的设计方案。实验研制基于所得设计方案的具有高调制频率的GaN基单芯片无荧光粉白光LED。

中文关键词： GaN；白光 LED；可见光通信；调制频率；

英文摘要： With the progress of GaN-based white light-emitting diodes (LED), the visible light communication (VLC) technology is a rapidly growing research area due to the potential for simultaneous use of the light sources for lighting and data transmission. However, the commercial phosphorescent white LEDs has worse modulation property which will limit the data transmission rate of VLC system using such LED light source. As a result, to fabricate new white LED with high modulation frequency is in great demand. The purpose of this project is to realize the phosphor-free single-chip white LED with high modulation frequency using GaN-based irregular multiple quantum well (IMQW) structures. First, the theoretical model and simulation program will be established for the optical and modulation properties of GaN-based IMQW structure. Using the simulation program the influence of design parameter on optical and modulation properties of GaN-based IMQW structure will be analyzed. From the analysis result the design parameter will be adjusted jointly in order to obtain GaN-based IMQW structure with good optical and modulation properties for lighting and communication application. Finally, the phosphor-free single-chip white LED with high modulation frequency using GaN-based IMQW structure will be fabricated experimentally.

英文关键词： GaN；white LED；visible light communication；modulation frequency；