原子层组装非晶氧化物半导体柔性TFT及可靠性研究

项目名称： 原子层组装非晶氧化物半导体柔性TFT及可靠性研究

项目编号： No.61474027

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 丁士进

作者单位： 复旦大学

项目金额： 81万元

中文摘要： 本项目面向低功耗高性能柔性电子系统的应用，开展基于非晶氧化物半导体（AOS）沟道的柔性薄膜晶体管（TFT）的研究。拟采用与聚酰亚胺柔性衬底热稳定性相兼容的原子层淀积技术来组装TFT的沟道/绝缘栅，研究原子层淀积InGaZnO、InGaZnAlO等AOS薄膜的生长工艺，以及AOS薄膜中元素组成对迁移率、载流子浓度等特性的影响，深入理解相关的物理机制。借助新材料、新工艺和新结构的引入，来研究TFT器件的性能与它们之间的相关性，获得对器件的性能进行调控的理论和方法。通过对AOS沟道和高介电常数绝缘栅的材料体系和物理结构进行设计和优化，制备出阈值电压低、亚阈值摆幅小、开关电流比大、场效应迁移率高的柔性薄膜晶体管。进一步地，通过对柔性薄膜晶体管的可靠性进行研究，深入理解器件在偏压应力、加热、光照、机械张力等条件下可能发生的性能退火过程及潜在的机理，为改善器件性能的稳定性提供理论依据和解决思路。

中文关键词： 柔性衬底；薄膜晶体管；非晶氧化物半导体；原子层组装；可靠性

英文摘要： Amorphous oxide semiconductor (AOS) channel-based flexible thin-film transistor (TFT) will be investigated for the application of low power and high performance flexible electronic systems.The atomic-layer-deposition (ALD) technique, which is compatible with the thermal stability of flexible polyimide substrate, will be used to assemble the channel/gate insulator of TFT.We will investigate ALD AOS films such as InGaZnO, InGaZnAlO and so on, as well as the effect of element composition in the AOS film on its mobility and carrier concentration etc, understanding deeply the related physical mechanisms.By introducing new materials, new processes and new structures, we will study the relationship between the device performance and them, and attain the theory and strategy for modulation of device performance.By means of engineering and optimization of the material system and physical structure of AOS channel and high dielectric constant gate insulator, we will fabricate flexible TFT with low threshold voltage, small subthreshold swing, a large on-to-off current ratio and a high effective mobility. Further, by studying the reliability of flexible TFT, we will understand deeply possible degradation processes of the device and the underlying mechanism under electrical bias, heating, illumination, mechanical stress etc. This could provide some theories and solutions for improvement in the performance stability of devices.

英文关键词： flexible substrate;thin-film transistor;amorphous oxide semiconductor;atomic-layer-assembly;reliability