基于能带剪裁的单极型HgCdTe高温红外探测器结构研究

项目名称： 基于能带剪裁的单极型HgCdTe高温红外探测器结构研究

项目编号： No.61306062

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 沈川

作者单位： 中国科学院上海技术物理研究所

项目金额： 25万元

中文摘要： HgCdTe红外焦平面探测器在分类武器平台红外系统中得到了广泛应用，但偏高的暗电流和较低的工作温度是制约其发展的共性问题。为了提高器件性能和工作温度，本项目基于能带剪裁的单极型HgCdTe NBN结构开展理论研究，与传统的P-N型器件相比，其重要优势在于可以通过能带工程设计直接消除SRH产生复合电流和结区表面电流，同时避开As掺杂形成P-N结的激活率低等瓶颈，对抑制暗电流和提高光电效率具有重要意义，从而提高器件性能和工作温度。本项目拟通过理论研究设计HgCdTe NBN结构，分析不同势垒层对载流子输运、量子效率可能产生的影响；理论计算与实验相结合对比NBN结构与传统n-on-p及p-on-n结构的HgCdTe器件性能优劣；优化结构，提出将禁带宽度渐变结构引入HgCdTe NBN的构想并进行理论研究;验证型器件研究。为最终获得高温高性能HgCdTe红外焦平面器件进行原理与实验探索。

中文关键词： HgCdTe；NBN结构；能带计算；分子束外延；

英文摘要： HgCdTe infrared focal plane array detectors has been widely used in classified weapons platforms infrared system, but the high dark current and low operating temperature is restricting the development of the common problems. In a theoretical study,the project is performed based on the bandgap-engineered unipolar HgCdTe NBN structure in order to improve the performance of the device and the operating temperature.Compared with the traditional PN-type devices, an important advantage is that it can eliminate the SRH generate composite current and the surface current of the junction areas by bandgap-engineered desigh, while avoiding the bottleneck of the As doped PN junction which is formed activated low significance to suppress the dark current and to improve the photoelectric efficiency, thereby improving the performance of the device and the operating temperature. The project intends to design the HgCdTe NBN structure through theoretical study, analyze the possible impact of different barrier layer on the carrier transport, quantum efficiency; theoretical and experimental combination of comparative the NBN structure and the traditional n-on-p and p-on the the HgCdTe device performance of the pros and cons of the-n structure; optimize the structure, the band gap gradient structure proposed to introduce into HgCdTe

英文关键词： HgCdTe；NBN structure；Numerical simulation；MBE；