基于全溶液法的柔性铁电场效应晶体管设计及相关存储器原型器件

项目名称： 基于全溶液法的柔性铁电场效应晶体管设计及相关存储器原型器件

项目编号： No.51303053

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 一般工业技术

项目作者： 侯莹

作者单位： 华东理工大学

项目金额： 26万元

中文摘要： 基于铁电场效应晶体管(FeFET)的铁电随机读写存储器(FeRAM)是下一代最具潜力的存储器之一。相比于无机场效应晶体管，由有机材料构成的柔性场效应晶体管及其逻辑电路具有工艺简单、成本低廉的优点，是未来电子器件如射频识别(RFID)标签等开拓广阔市场的需要。本项目围绕柔性铁电场效应晶体管的关键功能材料选择和全溶液法制备、晶体管结构与界面优化、相关集成电路设计三个方面开展研究，利用全溶液工艺，在塑料或纸质基片上制备由有机半导体、铁电聚合物、导电聚合物组成的柔性铁电场效应晶体管。用导电聚合物代替金属作为栅极和源漏电极材料，获得拥有超薄铁电层的场效应晶体管，实现操作电压低于10伏的晶体管。通过分析器件性能与晶体管结构及界面的内在关联，构造高性能柔性铁电场效应晶体管。在此基础上，设计逻辑电路单元，开展1T或1T1T型存储器原型器件的设计研究。

中文关键词： 铁电场效应晶体管；全溶液工艺；低操作电压；功能层材料优化和设计；逻辑电路

英文摘要： Ferroelectric random access memory (FeRAM) based on the ferroelectric field-effect transistor (FeFET) is one of the most potential memory devices. Compared with inorganic FET, flexible organic FET and its logic circuit composed of organic materials meets the demand of practical application due to the simple fabrication and low cost. In view of these advantages, our proposal is focused on three aspects of flexible FeFET: materials choice and all-solution process, optimization of structure and interface, and design of relevant integrated circuits. We plan to fabricate flexible FeFET composed of organic semiconductor, ferroelectric polymer and conductive polymer on plastic or paper substrate by all-solution process. Instead of metal electrodes, the conductive polymer is selected as the source, drain and gate electrode materials, so that the FeFET with the ultrathin ferroelectric layer can be achieved and smoothly used under an operating voltage as low as the order of V. By analyzing the internal relationship between the performance and the structure of FeFET, we plan to discuss the effective route to achieve the high-performance flexible FeFET and subsequently design corresponding logic cells and prototype memory devices such as 1T or 1T1T.

英文关键词： ferroelectric field-effect transistor；solution process；low voltage；design of the functional layers；logic circuit