SiC表面石墨烯的外延生长及其界面结构的同步辐射表征

项目名称： SiC表面石墨烯的外延生长及其界面结构的同步辐射表征

项目编号： No.50872128

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 机械、仪表工业

项目作者： 徐彭寿

作者单位： 中国科学技术大学

项目金额： 38万元

中文摘要： 石墨烯（Graphene）是近几年新发现的由六边形网格形成的二维碳平面材料。由于它在电学特性方面具有许多优良性质，从而在纳米电子学和自旋电子学元器件的制备以及大规模集成纳电子电路的设计中有重要应用。本课题利用我们已有的超高温分子束外延设备，使用高温退火或高温退火并辅助C束流的方法，通过控制生长条件、优化生长工艺，在SiC表面外延生长结晶性能良好、层数可控的单层或多层石墨烯样品。此外，我们还成功地探索了利用SiC缓冲层或直接沉积C原子的方法在Si、SiO2/Si、Al2O3、Cu等各种衬底表面生长石墨烯。利用各种实验技术，特别是同步辐射实验技术对制备的样品进行原位或非原位的结构表征，从而揭示石墨烯在SiC或其他衬底表面的形成和界面结构以及界面对石墨烯电子结构的影响。本课题的研究，不仅在基础研究上具有重要意义，而且在实际应用中也具有重要价值。

中文关键词： 石墨烯；碳化硅；分子束外延；界面结构；同步辐射

英文摘要： Graphene was found recently as a quasi two dimensional (2D) material consisting of a single hexagonally ordered planer layer of carbon atoms. As graphene exhibates a series of excellent electrical properties, it has many important applications in the fields of nano and spin electronic devices as well as the design of large-scale nano electronic integrate circuits. In this project, we grow single layer or few layer graphene on the substrate of SiC with good crystalline quality and controllable layer number based on the method of high temperature annealing or assistanted with C beam through controlling the growth condition and optimizing the growth parameters by using the high temperature molecule beam epitaxy equipment which has been already built. Besides, we also explore to grow graphene on the various substrates of Si, SiO2/Si, Al2O3 and Cu by using SiC buffer layer or direct deposition of C atoms. Many experimental techniques, including synchrotron radiation experimental methods are employed to characterize the grown samples in situ or out situ in order to study the formation of the graphene on SiC or on other substrates and the interface structure as well as the effects of interface on the electronic structure of graphene. This project is not only very useful for fundamental research but also has the important values of practical applications.

英文关键词： graphene; SiC; MBE; interface structure; synchrotron radiation