平面二硫富瓦烯敏化剂分子的合成及其聚集态对染料敏化太阳能电池性能影响的研究

项目名称： 平面二硫富瓦烯敏化剂分子的合成及其聚集态对染料敏化太阳能电池性能影响的研究

项目编号： No.21303117

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 郭鹍鹏

作者单位： 太原理工大学

项目金额： 25万元

中文摘要： 对染料/纳米半导体界面进行优化，减少电池工作中的副反应，获得高的开路电压（Voc），是染料敏化太阳能电池（DSSC）研究领域的热点之一。本项目利用空间位阻小的染料分子利于覆盖整个纳米半导体表面以及平面染料分子易发生π-π堆积自组装成有序聚集体的特点，加以吸附动力学控制，使染料从单分子分散到纳米半导体材料表面形成排列有序、吸附致密的单分子层，实现染料/纳米半导体界面优化，提高染料敏化太阳能电池的光电转换效率。本项目从染料分子自身性质出发解决染料/纳米半导体界面问题，以平面二硫富瓦烯敏化剂的合成为基础，结合理论计算和实验分析，通过染料吸附动力学控制敏化剂分子间相互作用，在用空间位阻小的平面分子保证最大化染料吸附量的同时，增加电子注入及降低电荷复合，为提高DSSC的Voc和光电转换利用率提供有价值的理论和实验依据。

中文关键词： 染料敏化太阳能电池；染料/纳米半导体界面优化；平面二硫富瓦烯敏化剂；吸附动力学控制；

英文摘要： Dye/nanoparticle interface optimization has attracted seriously research attention in dye sensitized solar cells (DSSC). Due to it is a generally effective way to decrease the side effects, such as charge recombination between injected electrons on semiconductor surface with oxidized dye and electrolyte species, and then realize high Voc. In this proposal, we demonstrate a strategy to form a well-ordered and compact single dye block layer on the surface of nanoparticle for optimization the dye/nanoparticle interface to enhance the DSSC performance, which is based on the small dye molecules would be more favorable to cover the entire surface of the nanoparticle and the anticipated aggregated dye layer would be formed through absorption dynamic control the intermolecular π-π stacking of coplanar dye molecules during single molecule dispersed state to absorbed state. To realized it, coplanar dithiafulvene sensitizer would be designed and synthesized, followed by theoretical calculation and experimental analysis of their molecular structure and properties, then combine with dye absorption process control the interaction between dye molecules to maximize the amount of the absorbed dye on the surface of nanoparticle as well as increase electron injection and retarding charge recombination. We believe this research wou

英文关键词： DSSC；dye/nanoparticle interface optimization；coplanar dithiafulvene sensitizer；adsorption dynamic control；