InGaN量子阱材料的应力调控及背照射结构太阳电池研究

项目名称： InGaN量子阱材料的应力调控及背照射结构太阳电池研究

项目编号： No.61474142

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 周梅

作者单位： 中国农业大学

项目金额： 85万元

中文摘要： 本项目提出了一种新型背照射InGaN量子阱结构太阳电池，该器件结构外加了多层In组分渐变层来缓解较高In组分的InGaN失配带来的应力，实现InGaN/GaN量子阱应力调控，并获得更高质量的材料，同时背照射也能更充分地吸收入射光，提高电池效率。本项目首先通过研究渐变层的In组分、厚度、层数等对InGaN应力释放的影响，揭示其弛豫机制并进行应力调控，找到缺陷抑制方法，然后我们还要研究位错和空位缺陷对InGaN太阳能电池的影响规律，建立起缺陷与太阳能电池的影响模型，最后我们还要进行理论计算，对这种背照射组分渐变结构太阳电池进行结构设计，并结合低缺陷材料技术，研制出高性能的InGaN太阳能电池（吸收光子能量大约在2.4eV以上）。

中文关键词： InGaN；量子阱；太阳电池

英文摘要： We have proposed a new back-illuminated InGaN multiple quantum wells(MQWs) solar cells. In this new device structure, several In-content graded InGaN layers are employed to relax the stress in the high In-content InGaN/GaN MQWs, as a result, the stress control of InGaN/GaN MQWs could be realized, and the performance of InGaN solar cells could be improved obviously. Firstly the effects of the added In-content graded InGaN layers on the stress and defects of high In-content InGaN/GaN MQWs are investigated, and the method to decrease the defects are found on the basis of clarifying the physical mechanism. Then the effects of dislocation and point defects on the performance of InGaN solar cells are investigated, and relationship between the defects and device performance are established. Finally the device structure are calculated and optimized design, at the same time, combining the technology of low-defects InGaN/GaN growth, the high performance of new InGaN solar cells with the absorbed photon energy higher than 2.4eV are realized.

英文关键词： InGaN;multiple quantum wells;solar cells