大信号及宽带调制信号激励下AlGaN/GaN HEMT功率器件行为模型建模方法研究

项目名称： 大信号及宽带调制信号激励下AlGaN/GaN HEMT功率器件行为模型建模方法研究

项目编号： No.61501344

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 孙璐

作者单位： 西安电子科技大学

项目金额： 20万元

中文摘要： 以AlGaN/GaN为基础的HEMT器件由于其独特的电气特性正在获得广泛的应用，但是对其在大功率及宽带调制激励下具有长期动态记忆效应的建模方法还研究不多，传统的等效电路方法必将存在电路模型设计困难和模型参数过多，提取复杂等问题。因此本课题着重研究AlGaN/GaN为基础的HEMT器件在大功率及宽带调制激励下的黑箱行为模型的设计和提取，建立准确的具有长期动态记忆效应的AlGaN/GaN HEMT器件行为模型，以期将其用于AlGaN/GaN HEMT为基础的射频电路设计，提高电路的设计精度和设计效率。

中文关键词： AlGaN/GaN；HEMT；宽带调制；行为模型；记忆效应

英文摘要： AlGaN/GaN-based HEMT devices are widely used because of the unique electrical characteristics, but its long-term modeling of dynamic memory effect in the high-power and wideband modulated excitation is also little research. Traditional compact circuit models have many problems such as too much parameters to be extracted and difficult to design circuit models. Therefore, this paper focuses on the design and extraction of black-box behavior model to AlGaN/GaN -based HEMT devices under broadband modulated excitation to establish an accurate long-term dynamic memory effect behavior model of AlGaN / GaN HEMT device, with a view to its use for AlGaN / GaN HEMT-based RF circuit design, improving design accuracy and efficiency of the circuit design .

英文关键词： AlGaN/GaN HEMT;Broad-band modulation;Behavior model;Memory effect