拓扑绝缘体/Si异质结能带调控与器件应用基础研究

项目名称： 拓扑绝缘体/Si异质结能带调控与器件应用基础研究

项目编号： No.61474014

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 李含冬

作者单位： 电子科技大学

项目金额： 77万元

中文摘要： 拓扑绝缘体（TI）的实验研究已经进入到将TI和其他体系相结合的阶段，如果能有效调制狄拉克费米子与其它量子态的耦合行为，将有望发展出新奇的量子功能器件。本项目将通过修饰Si表面，构筑具备磁性、超导性或者化学惰性的外延模板，并在其上生长具有不同维度与化学势特征的TI材料，以期实现界面狄拉克能带调控目的，挖TI/Si异质结构在光电探测领域的应用潜力。研究内容包括：Si表面结构的原子级精确调控；TI体系的外延制备；TI/Si异质结能带表征与调控；TI/Si异质结器件的光电应用。项目将综合应用分子束外延技术、超高真空扫描探针显微镜等方法系统探索狄拉克异质体系的量子态及调控，研究结果能揭示出TI/Si体系形貌、电子态结构和物理性能之间的一一对应关系，并有望制备出基于TI/Si异质结的光伏/光电器件。

中文关键词： 分子束外延；拓扑绝缘体；硅；异质结；能带调控

英文摘要： The heterostructures of topological insulators (TIs) and other materila systems have attrated many attentions. It's widely acknowledged that the coupling between Dirac fermions and other quantum states would lead to other new quantum particles fromation, which may serve as carriers for novel quantum devices.In order to effectively explore the Dirac fermions bounded at heterointerfaces and the energy-state-hybridization phenomenon between Dirac fermions and other qunatum particles, a comprehensive study will be carried out in this project. We'll try to explore the epitaxial growth of low-dimentional TIs on functional-materials modified Si surfaces, research the electronic transport behaviors of TI/Si heterostructures, and fabricate infrared/THz detectors based on TI/Si heterojunction. The following issues will be paid special attentions: 1. The manipulation of superconductivity, mangetism, and Fermi levels on Si surfaces. 2. Heteroepitaxy and Fermi level tuning of TIs materials. 3. Manipulation and characterization of energy bands/states at the TI/Si interfaces. 4. The infrared detector performance of TI/Si heterostructures.Ultra-high vacuum compatible techniques such as molecular beam expitaxy and scanning probe microscopy will be employed during the research which will facilitate precisely characterizing and manipulating the surface structures and local electronic states. It's expected that the correlations between structural morphologies, electronic states, and physical properties of the TI/Si system can be clearly clarified. New photovaltaic/optoelectric devices based on TI/Si heterojunctions can be developped by the end of this project.

英文关键词： Molecular Beam Expitaxy;Topological Insulators;Silicon;Heterojunctions;Band Engineering