项目名称: Heusler结构框架下新型磁电材料开发与单晶多层膜制备研究
项目编号: No.51271071
项目类型: 面上项目
立项/批准年度: 2013
项目学科: 一般工业技术
项目作者: 刘国栋
作者单位: 河北工业大学
项目金额: 80万元
中文摘要: 本申请针对目前同时利用电子电荷和自旋属性材料中存在的居里温度低、电子自旋极化率偏低、多层膜材料之间匹配度差等问题,提出在Heusler结构下开发高匹配度、高性能的新型电磁材料的思路。这种高匹配度主要是指开发出来的材料在结构、晶格参数和成分上高度接近。高性能指的是磁性层材料应当具有极高的电子自旋极化率(最好达到100%)和高的居里温度(至少在室温以上),开发出的半导体材料应当具有适当的能隙宽度。通过建立开发此类高匹配性、高性能新型磁电材料的途径;解决一体化单晶多层膜的制备工艺和技术以及材料中原子的有序化问题等三个关键问题及开展相关工艺和物性和工艺研究,最终达到开发出一系列新的Heusler构架下的具有高居里温度,高自旋极化的稀磁半导体、半导体、磁性半导体和半金属材料。并最终利用这些相互高度匹配的材料制备出[磁性体/半导体/磁性体]一体化单晶多层膜的研究目标。
中文关键词: 哈斯勒合金;半金属;拓扑绝缘体;稀磁半导体;磁性形状记忆合金
英文摘要: In current researches on the materials with the application for both the electron charge and spin, the main problems are that Curie temperature and electron spin polarization of the materials are low; the match between the layers in multilayer materials is poor. In order to resolve these problems, in our application, we propose a new idea that the materials with high matching degree and high perfomance should be developed in the intermetallic compounds with Heusler structure. This high matching degree refers to these associated materials are very similar in the structure, lattice parameters and composition. High-performance refers to the magnetic layer material should have a high electron spin polarization (preferably 100%) and high Curie temperature (it should be up to room temperature or above), and the developed semiconductor materials should have the appropriate energy gap width. By establishing the way of the development of such magnetic-electronic materials with high-matching and high performance; developing the single crystal multilayer preparation and atom ordering method and technology, as well as the investigation on related physical properties, ultimately, we will achieve a series of magnetic semiconductors, semiconductors, magnetic semiconductors and semi-metallic materials with high Curie temperatur
英文关键词: Heusler alloy;half-metal;topological insulator;diluted magnetic semiconductor;ferromagnetic shape memory alloy