Si基单量子结构及其耦合体系的微区电学性质研究

项目名称： Si基单量子结构及其耦合体系的微区电学性质研究

项目编号： No.11274072

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 杨新菊

作者单位： 复旦大学

项目金额： 78万元

中文摘要： 硅基单量子结构及其耦合体系的电学性质研究，是微观量子体系研究的重要基础课题，同时也是实现它们在光电通讯、量子信息等领域应用的关键环节。本项目将利用扫描探针显微镜的相关技术，包括导电原子力显微镜、静电力显微镜、扫描电容显微镜、扫描开尔文显微镜、交流电流检测原子力显微镜等，系统地研究GeSi单量子点、单量子环及单根Si纳米线等硅基单量子结构的多种电学特性，揭示各种电学性质之间的内在关联以及电学性质对量子结构基本参量的依赖关系，探讨其中的物理机制。在此基础上，将研究单量子结构之间的耦合效应以及耦合效应对电学性质的影响，探索这些耦合体系新的物理现象、特性和机制，实现对量子耦合结构性质的调控。研究外加电场或磁场、温度、表面改性、掺杂、环境因素等外界作用对量子结构电学特性的影响，探索对量子结构电学性质进行调制的方法。因而本项目的研究具有重要的科学意义和潜在应用价值。

中文关键词： 单量子结构电学性质；扫描探针显微镜；GeSi量子点；GeSi量子环；Si纳米线

英文摘要： The electrical property studies on silicon-based quantum structures are not only an important subject for fundmental basic researches, but also play an important role in the applications such as photoelctrical communications and quantum information. The project will apply the scanning probe microcpy related techniques, including conductive atomic force microscopy, electrostatic force microscopy, scanning capacitance microscopy, scanning Kevlin microscopy and ac current-sensing atomic force microscopy, to study the electrical properties of single Si-based quantum strucutures including GeSi quantum dots and quantum rings, and Si nanowires. After the comprehensive studies on electrical properties,we will try to reveal both the relationships between the different electrical properties and the correlations between the electrical properties and the micro-structure parameters of the quantum structures, and to find out the intrinsic physical mechanisms. Based on the studies on single quantum structures, researches will be performed on studying the coupling effects between the single quantum structures, as well as the influences of the coupling effects on their electrical properties. Meanwhile efforts will be made to explore the novel electrical phenomena, properties and mechanisms of the coupled quantum strucutres,and f

英文关键词： Electrical properties of individual nanostructures；Scanning probe microscopy；GeSi quantum dots；GeSi quantum rings；Si nanowires