项目名称: 硅量子点纳米结构薄膜材料及其太阳电池的制备研究
项目编号: No.51262022
项目类型: 地区科学基金项目
立项/批准年度: 2013
项目学科: 一般工业技术
项目作者: 周炳卿
作者单位: 内蒙古师范大学
项目金额: 49万元
中文摘要: 利用等离子体增强化学气相沉积(PECVD)技术和热丝CVD技术,在玻璃和单晶硅衬底上低温(300℃)生长镶嵌在非晶氮化硅母质中的硅量子点纳米结构薄膜材料。使用XRD、Raman谱、TEM、光致发光谱、红外谱等对硅量子点纳米结构材料进行表征。通过优化沉积参数和薄膜厚度,来控制硅量子点的大小、密度和形状。比较两种CVD技术制备硅量子点材料的优缺点,获得制备量子点材料的最佳工艺参数和技术。对硅量子点纳米材料进行P掺杂和N掺杂。制备出纳米晶硅量子点多层膜(3-8层),并控制每层膜中量子点的大小、密度和形状,使上层膜具有小的量子点(~2nm),下层膜具有大的量子点(~8nm)。对量子点纳米结构材料和量子点太阳电池进行理论模拟计算。使用优化的硅量子点纳米结构材料组装多结硅量子点纳结构太阳电池,并初步获得光电转换效率达到3-5%的硅量子点薄膜太阳电池。为制备高效、廉价的硅第三代太阳电池打下坚实的基础。
中文关键词: 太阳能电池;硅量子点材料;富硅-氮化硅薄膜;等离子增强化学气相沉积;热丝化学气相沉积
英文摘要: Silicon quantum dot(QD) nanostructure thin films in amorphous silicon nitride matrix are deposited onto glass substrates and silicon substrates by plasma enhanced chemical vapour deposition(PECVD) and hot wire CVD at a low temperature (300℃). The characteristics of the silicon QD nanostructure films are investigated by XRD,Raman spectroscopy,TEM,photoluminescence(PL),infrared spectra and so on. By optimizing the deposition parameters and film thickness, we control the size, density and shape of silicon QDs.Through comparing and analyzing the merits and demerits between PECVD and hot wire CVD, the best deposition technical parameters are obtained.The N-type and P-type silicon QD nanostructure thin films are deposited by doping phosphorus and doping boron.We will prepare the nanocrystalline silicon quantum dot themultilayer films(from 3 to 8 layer), and we can control the QD's size, QD's density and QD's shape in different layer. Meanwhile,we will prepare some different size silicon QDs, smaller size Si QDs(~2nm) on top of the thin film, bigger size Si QDs (~8nm) on bottom of the thin film,and increasing QD's size step by step from top layer to bottom layer. we will carry out the theoretical calculations and computer's numerical simulations for silicon QD nanostructure thin films and solar cells.The optimizing s
英文关键词: solar cells;Si quantum dots materials;Si-rich silicon nitride thin films;plasma enhanced chemical vapor deposition;hot wire chemical vapor deposition