新型过渡金属硫属化合物二维半导体：可控制备、物性表征及光电子器件

项目名称： 新型过渡金属硫属化合物二维半导体：可控制备、物性表征及光电子器件

项目编号： No.61474033

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 王振兴

作者单位： 国家纳米科学中心

项目金额： 78万元

中文摘要： 过渡金属硫属化合物(TMDC)二维材料在电子、光电子器件领域具有广阔的应用前景。大部分TMDC二维材料只在单层形态下才是直接带隙结构，然而大面积单层材料的生长非常困难，影响了其在高效光电子器件中的实用化前景。相比于单层，多层材料具有更高的表面态密度及相对容易获得大面积制备，具有更实际的应用前景。块体和单层均为直接带隙的ReS2的发现打开了一个新局面：采用多层材料也可以获得较高的光电子性能。然而Re在地壳中含量非常低，为了大规模的应用，必须探索新型直接带隙材料。因此，本研究将围绕MX2(M = Re, Zr, Hf; X = S, Se)及MSxSe2-x(0 ≤ x ≤ 2)等新型二维半导体的可控制备、物性表征及光电子器件展开工作。一方面探索具有类似ReS2直接带隙性质的TMDC材料，另一方面针对Zr-基和Hf-基TMDC二维材料的研究空白，展开系统深入的研究。

中文关键词： 光电晶体管；过渡金属硫属化合物；光电探测器；二维层状材料；光谱性质

英文摘要： Due to the unique physical and chemical properties, two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconducting materials demonstrate great potential applications in electronics and optoelectronics. Most of 2D TMDCs have direct band structures only in the monolayer form. However, the growth of single-layer TMDC with large-scale is very difficult, which limits the practical application in high-performance optoelectronic device. In contrast to monolayer, multilayer has a more realistic prospect due to its higher surface state density and relative ease to obtain large-area material. Recently, ReS2 was found to be the first TMDC material with a direct band gap in both bulk and monolayer forms. This opened new opportunities for practical optoelectronic applications of TMDC materials: multilayer materials can achieve high-performance optoelectronic devices. Unfortunately, Re content in the crust is very low. In order to realize extensively practical applications, new direct band gap TMDCs must be explored. Therefore, this proposal will focus on the controllable growth, properties and optoelectronic applications of MX2 (M = Re, Zr, Hf; X = S, Se) and MSxSe2-x ((0 ≤ x ≤ 2). On the one hand, we explore the new materials with a direct band gap, just similar to ReS2. On the other hand, we systematically investigate Zr- and Hf-based TMDCs to fill the research blank. We believe we will make a series of innovative achievements and this study will play a significant role in promoting the practical applications of TMDCs.

英文关键词： phototransistor;transition metal dichalcogenides;photodetector;two-dimensional layered materials;optical properties