GaN基HEMT器件陷阱及缺陷表征分析方法及相关退化机理研究

项目名称： GaN基HEMT器件陷阱及缺陷表征分析方法及相关退化机理研究

项目编号： No.61574012

项目类型： 面上项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 冯士维

作者单位： 北京工业大学

项目金额： 16万元

中文摘要： GaN基HEMT器件在高频、大功率应用方面性能卓越，成为国防、通信等领域亟待期盼的新一代关键元件。然而，器件应用可靠性和稳定性问题是走向成熟的主要障碍，其中异质结构引入的有源区陷阱和缺陷是制约可靠性的关键问题。本项目拟针对陷阱和缺陷表征方法和技术上存在的局限和不足，以掌握的RC网络分析技术为基础，通过提取器件主要参数与陷阱和缺陷相关联的时间常数，应用峰值曲线反卷积求解理论和技术，探索建立一种“峰值谱”形式表征分析方法，并建立明晰的内在物理关系，实现准确、便捷确定陷阱和缺陷类型和浓度目的。

中文关键词： GaN基HEMT；陷阱表征；峰值谱技术；无损检测；可靠性

英文摘要： GaN-based HEMTs have become the next generation key devices in fields of defense, communications and others because of their excellence performance in high frequency and high power. However, their reliability and stability in applications are the major obstacles. And among these, traps and defects in active area introduced by heterostructure are the key problems. Facing to the limitation and minor of regular techniques, this project intends to establish a peak spectral characterization analysis method and clear physical relations, which can determine the different types of traps and defects concentration in device active area accurately and conveniently on the basis of mastered RC network analysis technology, by extracting time constant of major parameters with traps and defects and combining the theory of peak curve and deconvolution methods, and finally improve the existed technology.

英文关键词： GaN-based HEMT；Traps characterize；Peak spectrum technique；Nondestructive measurement；Reliability