项目名称: 低BPD密度4H-SiC外延生长研究
项目编号: No.51302215
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 一般工业技术
项目作者: 苗瑞霞
作者单位: 西安邮电大学
项目金额: 25万元
中文摘要: 4H-SiC外延材料中高密度缺陷严重影响着SiC器件的电学性能,其中BPD(基面位错)对器件性能影响最为严重。为了提高器件可靠性,必须采取有效的缺陷控制方法,降低外延层中BPD密度。据此,本项目在前期对BPD成核机理研究基础之上,通过理论计算位错弹性能并结合无损表征结果研究BPD延伸和转化机理;根据衬底表面晶体生长规律,结合BPD延伸和转化机理研究位错生长机制,制定一种有效控制外延层中BPD的外延生长方法,制备出高质量4H-SiC外延材料,为提高SiC器件可靠性奠定良好的基础。
中文关键词: SiC;位错;BPD;无损表征;延伸和转化机理
英文摘要: The high density defects in 4H-SiC epitaxial materials effect seriously on electrical properties of SiC devices.The most serious defects on device performance are BPDs in epilayer.In order to improve device reliability, BPDs in 4H-SiC epilayer must be controled.In this project, The mechanism of conversion and propagation of dislocations will be investigation by the result of theoretical calculation of the flexibility ofthe dislocation and non-destructive characterization of defects; According to the mechanism of conversion and prpogation of dislcations and the discipline of crystal growth,the method of epitaxay will be propesed. The rusult of this project will lay a good foundation to improve the reliability of SiC devices.
英文关键词: SiC;dislocation;BPD;nondestructive characterization;extension and transformation mechanism