碳化硅纳米点阵诱导高纯度多晶致密碳化硅陶瓷的制备与性能优化

项目名称： 碳化硅纳米点阵诱导高纯度多晶致密碳化硅陶瓷的制备与性能优化

项目编号： No.51272205

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 杨建锋

作者单位： 西安交通大学

项目金额： 83万元

中文摘要： 碳化硅陶瓷具有高强度、高耐热性和优异的半导体性能，在高温耐热及极端环境下可发挥重要的作用。利用高温气相传输法，通过石墨衬底原位碳化硅成核生长制备出了碳化硅陶瓷，在此基础上，本课题提出化学气相沉积（CVD）制备碳化硅纳米点阵与物理气相传输（PVT）生长碳化硅多晶陶瓷相结合的思想，拟通过PE-CVD结合超薄模板制备结构和组织可控的碳化硅纳米点阵列，以此为核心使用高温PVT技术生长多晶致密碳化硅陶瓷。研究非晶碳化硅纳米点阵的形成机理和再结晶规律，以及对PVT法制备的碳化硅陶瓷影响，研究PVT过程的源材料、气氛组成、温度及温度梯度等因素对碳化硅陶瓷的组织的影响，探讨材料性能优化的影响规律，获得PVT制备多晶碳化硅的生长模型。由于制备过程的特殊性，碳化硅陶瓷材料的纯度极高，定向组织得到细化，材料具有优异的力学与理化性能。研究结果不但具有学术价值，而且在实际高温、腐蚀等的应用场合也具有重要的现实意义。

中文关键词： 碳化硅；纳米点阵；制备技术；组织控制；力学性能

英文摘要： Silicon carbide plays an important role in the high temperature heat, and extreme environments, due to its high strength, high thermal resistance and excellent semiconductor properties. Based on the research about preparation of silicon carbide ceramics through in-situ SiC nucleation and growth on carbon substrate, using high temperature physical vapor transport, an idea of combination of silicon carbide nano arrays prepared by chemical vapor deposition (CVD) and growth of silicon carbide polycrystalline ceramics by physical vapor transport (PVT) is proposed. It is proposed that the SiC arrays can be grown by PE-CVD technique with ultra-thin template, and also their microstructure and nano-crystalline state are controlled during growth process., and polycrystalline dense silicon carbide ceramics is prepared by taking the SiC nano arrays as nucleus and using high-temperature PVT growth. Formation mechanism of amorphous silicon carbide nano arrays and law of the recrystallization will be studied, as well as their effect on silicon carbide ceramics prepared by PVT method. The effect of starting materials, the atmosphere composition, temperature and temperature gradients et al. on the microstructure of the silicon carbide ceramics will be further studied, and law of materials performance optimization will ve investi

英文关键词： Silicon carbide；Nano lattice；Fabrication technique；Microstructure Control；Mechanical Properties