ZnO外延薄膜的p型掺杂及自补偿机理研究

项目名称： ZnO外延薄膜的p型掺杂及自补偿机理研究

项目编号： No.11274366

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 梅增霞

作者单位： 中国科学院物理研究所

项目金额： 93万元

中文摘要： ZnO是一种非常有应用前景的短波长光电子材料，但是p型掺杂难题严重地阻碍了它在光电子器件方面的应用和发展，其中关键的科学问题- - 缺陷之间的相互作用以及缺陷对受主的补偿机理等物理难题尚未得到解决，澄清这一点对于ZnO研究的顺利开展非常重要。本项目拟利用射频等离子体辅助分子束外延技术，结合二次离子质谱、光致发光谱、拉曼散射光谱、卢瑟福背散射谱、霍尔测试、正电子湮灭谱等丰富的表征测试手段，在获得高质量ZnO单晶薄膜的基础上,采用Na-H/Li-H共掺、As/Sb单掺两种技术方案，系统开展ZnO的p型掺杂、缺陷控制及自补偿机理研究。通过理论计算和实验相结合的方式，深入探讨ZnO单晶薄膜中本征缺陷以及p型掺杂引入缺陷的类型、形成机制以及电子结构，研究缺陷之间的相互作用以及自补偿效应产生的机制，探索抑制自补偿的有效办法和实验手段，优化掺杂方案，获得国际公认的、可重复可检验的器件质量p型ZnO薄膜。

中文关键词： 氧化锌；p型掺杂；自补偿效应；缺陷；分子束外延

英文摘要： As an important wide bandgap semiconductor, ZnO has been studied extensively due to its potential applications in next-generation short-wavelength optoelectronic devices. However, a formidable challenge in growth of reliable and repeatable p-type ZnO materials severely hampered its progress in optoelectronic device applications. It has been well established that either dopant-induced defects such as Li interstitial, or native defects like Zn interstitial and oxygen vacancy, will result in a strong self-compensation effect and make it difficult to realize stable and reproducible p-type conductivity in ZnO. However, the nature and interaction of various defects as well as the mechanism of their compenstation effects on acceptors haven't been clealy understood and solved yet. Therefore, it is very essential to explore these critical issues and provide a scientific guidance for further research in ZnO-based materials and devices. In this project, we will carry out the invesigation of p-type doping and self-compensation effect in high-quality ZnO single crystalline films prepared by radio-frequency plasma-assisted molecular beam epitaxy technique, which can exclude the unnecessary influence from impurities in hydrothermally grown ZnO bulk crystals. Some advanced analysis methods will be applied to carefully determine

英文关键词： ZnO；p-type doping；self-compensation effect；defects；molecular beam epitaxy