半导体照明用荧光SiC衬底基础研究

项目名称： 半导体照明用荧光SiC衬底基础研究

项目编号： No.61504075

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 彭燕

作者单位： 山东大学

项目金额： 23万元

中文摘要： 面向半导体照明长远发展的战略需求，本项目拟解决新型荧光SiC(f-SiC)衬底的若干基础科学问题并完成f-SiC衬底材料的制备工作。F-SiC衬底是指SiC引入适量的施主和受主杂质，在光的激发下施主和受主对（DAP）复合发光，其发光能很好的覆盖黄光和蓝绿光。f-SiC作为衬底制备LED，具有高效、高显色指数、高可靠性等优点，且不需要额外添加荧光粉。通过本项目的研究揭示f-SiC中的DAP发光特征及其变温特性，明确超高效率发光的可行方法；研究高掺杂情况下的点缺陷和位错行为、载流子和声子寿命特性与光学特性的耦合作用，探索结晶质量对量子效率影响；掌握荧光SiC体块单晶生长的基本物理过程，分析杂质的分凝特点，实现高掺杂下的晶型可控生长。该研究不仅为进一步提升f-SiC衬底的性能奠定科学基础，同时对扩展新型LED衬底具有重要意义。

中文关键词： 化合物半导体材料；光学性能；荧光SiC；施主受主对

英文摘要： According to the strategic demands and long-term target of the semiconductor solid-state lighting，the research target is to solve some basic scientific problem and grow high quality and high efficiency fluorescent SiC (f-SC) substrate. F-SiC，which contains donor and acceptor impurity, emits yellow-orange and blue-green light by optical pumping. It is expected to high conversion efficiency, an excellent CRI and high reliability without phosphors. Based on characterization of the luminescence and temperature dependence of DAP, the feasible method of high efficient luminescence will be advanced. The coupling effect of point defects and dislocations behavior, carrier concentration and phonon lifetime on optical properties will be studied. The relationship between the crystalline quality and quantum efficiency will be analyzed. Based on the established growth and process technology, the chemical segregation coefficient of impurity will be determined for a wide range of concentration. It will discuss a possible way to control the polytype under high doping..This study not only lays on a scientific foundation for further improvement of the f-SiC substrate, but also plays the important role to develop the new type of LED substrate.

英文关键词： compound semiconductor;optical property;fluorescent SiC;Donor and acceptor pairs