项目名称: 磁性分子吸附对过渡金属硫属化合物电子结构的影响
项目编号: No.11504169
项目类型: 青年科学基金项目
立项/批准年度: 2016
项目学科: 数理科学和化学
项目作者: 程迎春
作者单位: 南京工业大学
项目金额: 24万元
中文摘要: 磁性分子吸附的过渡金属硫属化合物在稀磁半导体、谷电子学和量子计算等领域有潜在应用。研究磁性分子与过渡金属硫属化合物的相互作用是探讨过渡金属硫属化合物中的铁磁性、谷极化和量子反常霍尔效应的关键。本申请通过第一性原理计算方法得到体系的结合能、差分电荷密度、自旋密度分布、态密度和能带结构来研究磁性分子吸附的过渡金属硫属化合物的铁磁性、谷极化和量子反常霍尔效应。通过研究过渡金属硫属化合物的电子结构对磁性分子和缺陷的依赖关系来探究磁性分子调控过渡金属硫属化合物铁磁性、谷极化和量子反常霍尔效应的可能性,为基于过渡金属硫属化合物的电子器件的设计提供理论依据。
中文关键词: 铁磁性;谷极化;量子反常霍尔效应;过渡金属硫属化合物;第一性原理计算
英文摘要: Transition metal dichalcogenides with magnetic molecular absorption have potential application in diluted magnetic semiconductor, valleytronics and quantum computing fields. The study of the interaction between magnetic molecular and transition metal dichalcogenides is essential to achieve the ferromagnetism, valley polarization and quantum anomalous hall effect in transition metal dichalcogenides. To study the effect of magnetic molecular absorption on transition metal dichalcogenides we proposal to calculate the binding energy, charge density difference, spin density, density of states, band structure by using first-principles method. By investigating the dependence of the electronic properties on various magnetic molecules and defects we can explore the possibility to control ferromagnetism, valley polarization and quantum anomalous hall effect in transition metal dichalcogenides by magnetic molecular absorption. This proposal will be instructive for design electronic devices based on transition metal dichalcogenides.
英文关键词: ferromagnetism;valley polarization;quantum anomalous hall effect;transition metal dichalcogenides;first principles calculations