钙钛矿锰氧化物体系应变场调控的磁、电性质和相关磁记忆效应研究

项目名称： 钙钛矿锰氧化物体系应变场调控的磁、电性质和相关磁记忆效应研究

项目编号： No.11474341

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 王晶

作者单位： 中国科学院物理研究所

项目金额： 95万元

中文摘要： 对钙钛矿锰氧化物薄膜的磁电特性实施低功耗、非易失性调控是当前磁电子学领域极具挑战性的任务之一。本项目以不同特征应变场对锰氧化物薄膜的轨道电子占据、电荷-轨道-自旋有序/无序排列等的影响为切入点，结合磁矩、矫顽力、剩磁、渗流输运等表观磁、电特性对应变场的响应规律，阐明应变诱导的磁记忆效应在轨道-电荷-自旋等微观层面的形成机制。研究锰氧化物相分离体系电荷、轨道及自旋有序相的分布、共存和竞争随应变场的变化规律，认识具有不同特征的相分离体系电声耦合对磁、电特性以及磁记忆效应的作用机制。研究关联耦合的铁电与铁磁畴结构对不同特征应变场的响应规律及其与磁记忆效应的关联，从而理解应变调控的磁、电性质变化及磁记忆效应的本源。通过本项工作不仅可加深对锰氧化物体系丰富机理的认识，而且对基于应变调控磁记忆效应的新型磁电子学器件的研究和设计也具有重要实际意义。

中文关键词： 钙钛矿锰氧化物；应变场；异质结构；磁记忆效应

英文摘要： To realize the nonvolatile strain-field control of magnetism and electric properties on perovskite manganites films with reduced energy consumption is a significant and challenging task in the research of spintronics. In this item, the impact of the lattice strain-field with various characters on the electron occupation, charge-orbit-spin ordered/disordered arrangement, together with the response of the magnetic and electric properties such as magnetization, remanence and percolative transport to the strain-field, will be investigated to clarify the formation mechanism of the strain-induced magnetic memory effect on a micro-level. By studying the modulation of phase distributions, coexistence and competition with the external strain-field for the separated charge/orbit and spin ordering phases, we will realize the underlying mechanism of the electron-phonon coupling on magnetism and electric properties as well as magnetic memory effect. We also plan to study the variation of coupled ferroelectric and ferromagnetic domain structures under different strain-field and its correlation with the magnetic memory effect, so that the original nature of the strain-field control of magnetism and electric properties as well as the magnetic memory effect could be understand. This research would generate useful information for understanding the unique behaviors of perovskite manganites. From the view of application research, our studies may also be important for developing a novel magneto-electronics devices based on the strain modulated magnetic memory effect.

英文关键词： perovskite manganites;strain field;heterostructure;magnetic memory effect