金属上外延大面积高质量硅插层石墨烯的纳电子器件研究

项目名称： 金属上外延大面积高质量硅插层石墨烯的纳电子器件研究

项目编号： No.61474141

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 鲍丽宏

作者单位： 中国科学院物理研究所

项目金额： 92万元

中文摘要： 探索合成大面积、高质量的石墨烯的方法、研究其电子器件性能并构筑纳米电路对于未来石墨烯在半导体工业的应用具有重要意义。直接在金属单晶基底（薄膜）上外延石墨烯层，并在石墨烯与金属基底（薄膜）界面处插入半导体Si层或Si氧化物层，利用顶层石墨烯制作纳米器件并构筑纳米电路是一条潜在可行的途径。本课题将通过精确控制生长条件，在金属基底上外延毫米级单层石墨烯薄膜后通过控制插入Si层的厚度并加以氧化，得到理想的绝缘层；然后探索在金属基底上生长的插氧化硅石墨烯薄膜的器件制作工艺并测量其电输运性能；控制石墨烯与所插Si层的界面特性，研究金属基底上graphene-Si异质结构在垂直方向的输运特性；最后直接在石墨烯/氧化硅/金属体系原位加工各种半导体器件，将其组合在一起共同构成简单逻辑器件（如与门、非门等）甚至纳米电路，探索外延生长石墨烯后直接构筑纳米电路的技术途径。

中文关键词： 石墨烯；迁移率；纳米器件；电子输运；半导体器件

英文摘要： It is critical to investigate the synthesis of large scale and high quality graphene, fabrication of the electronic devices and integration of nanocircuits for its future applications in semiconductor industry. Direct epitaxial growth of graphene on single crystal metal substrates or thin films, and intercalation of Si layer or SiOx layer into the interface between graphene and metal substrates or thin films, and fabrication of nanoelectronic devices and final integration of nanocircuits is a potential route, providing a desirable platform and strong motivation for graphene research. In this project, we are proposing to epitaxially grow monolayer and single crystalline graphene in milimeter scale, then intercalate Si layers into the interface between the metal substrates or thin films and graphene with controllable thickness, and oxize the Si layers by tuning the experimental parameters in a precise way, yielding a reliable insulating dielectric layer for in-situ fabrication of nanoelectronic devices based on the high quality graphene; then investigate the fabrication process of the electronic devices and measure their electronic transport characteristics; by controlling the interface features between graphene and intercalated Si layers, investigate the heterostructure of graphene-Si on metal substrate and their transport response in longitudinal direction; finallly in-situ fabrication of nanoelectronic devices like field-effect transistors and logic gates, and combine them together to construct nanocircuits and test their electronic performance, exploring a reliable way for direct fabrication of electronic devices and construction of nanocircuits after epitaxial growth.

英文关键词： graphene;mobility;nanodevices;electronic transport;semiconductor devices