PVT法掺锗碳化硅单晶制备、结构及性能研究

项目名称： PVT法掺锗碳化硅单晶制备、结构及性能研究

项目编号： No.51502156

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 陈秀芳

作者单位： 山东大学

项目金额： 21万元

中文摘要： 碳化硅（SiC）单晶具有宽带隙、高热导率、高饱和电子漂移速率等优点，已成为高温、高频、大功率半导体器件的优选材料。但掺锗碳化硅单晶材料具有可调节晶格参数，减少与外延层失配度，调节能带，减小接触电阻，控制晶型及点缺陷等优点，在半导体照明、电力电子器件、光子器件和能带工程领域具有重要研究价值和应用前景。本项目拟创新性地采用物理气相传输（PVT）法在碳化硅源粉中掺入锗元素生长碳化硅单晶。本项目拟围绕两个关键科学问题：1. 掺锗碳化硅单晶生长热力学和动力学机制；2. 掺锗碳化硅单晶能带调控机制，开展掺锗碳化硅晶体理论研究、材料生长和结构性能测试三项工作。探索锗元素掺杂技术、缺陷控制技术、应力抑制技术、物理性能调控技术，力求生长出高质量单晶，并能进行器件应用，实现新方法、新晶体、新应用的突破。本项目的成功实施将实现宽禁带SiC功能晶体的创新研究，丰富功能材料学科，填补国内空白，具有重大应用价值。

中文关键词： SiC晶体；锗掺杂；物理气相传输

英文摘要： Silicon carbide (SiC) is a preferred material for high temperature, high-frequency, high-power semiconductor devices, owing to its superior properties, such as wide bandgap, high thermal conductivity, and high saturation velocity. Due to its adjustable lattice parameter, lower mismatch to epitaxial layer, modulatory the electronic band structure , lower contact resistance, and controllable polytype and point defects, germanium-doped SiC single crystal has promising research value and applied foreground in the area of semiconductor lighting, power electronics, photonic devices and band-gap engineering. This project intends to innovatively apply the physical vapor transport (PVT) method to grow SiC:Ge crystals. There are two key scientific problems: 1. Study the thermodynamics and dynamics mechanism of SiC:Ge crystal growth; 2. Regulate the electronic band structure, conduct research on theoretical knowledge of SiC:Ge, crystal growth and structure properties characterization. By exploring the techniques of germanium doping, defects control, stress suppression, regulation of physical properties, this project is dedicated to growing high quality single crystals, completing the device application and achieving new breakthrough in new method, new crystal and new application. The successful implementation of this project will innovate research on wide bandgap SiC crystals, enrich the functional materials discipline, fill the domestic blank, and has significant application value.

英文关键词： SiC single crystal;Ge doping;Physical Vapor Transport