项目名称: GaN基功率器件基础问题研究
项目编号: No.61334002
项目类型: 重点项目
立项/批准年度: 2014
项目学科: 无线电电子学、电信技术
项目作者: 郝跃
作者单位: 西安电子科技大学
项目金额: 280万元
中文摘要: 本项目针对GaN基高压器件和新型增强型器件,开展GaN材料缺陷引起功率器件栅漏电和缓冲层漏电的物理机理、异质结构材料载流子分布和输运的控制等基础问题研究,实现低缺陷密度、高电子迁移率、高电子限域GaN基异质结构材料;设计合适的绝缘栅介质材料和绝缘栅结构,将先进的绝缘栅介质生长技术和缺陷表征方法相结合,实现低界面态密度的MIS-HEMT结构。深入分析影响GaN基功率器件击穿的各种因素,获得相应的击穿模型,重点研究浮空复合场板器件结构,获得具有高击穿电压的GaN基功率器件结构。探索p型栅势垒调制实现增强型器件的机理,研究材料设计、器件结构设计,通过器件制备和工艺优化等手段,获得高阈值电压的GaN基增强型HEMT器件。最后,研究GaN基功率器件存在的主要可靠性问题并提出改善方案。通过本课题的研究,为我国GaN基功率器件的发展提供理论指导和技术支撑。
中文关键词: GaN;功率器件;基础问题;;
英文摘要: The research of this project aims to the key problems about GaN-based high breakdown and new E-mode devices, including the physical mechanisms of gate and buffer leakage current caused by defects in GaN layers, the control of carrier distribution and transport and so on. Finally, Low defect density, high electron mobility and high electron confinement GaN-based electronic materials will be achieved. High quality MIS-HEMT with low density interface states will be realized, by choosing proper gate dielectric materials and structures, combining gate dielectric growth process and defect characterization techniques. By analyzing the factors that affect the breakdown of GaN based power devices, the corresponding breakdown model can be obtained. By studying the floating field-plate structure in-depth, a novel GaN based device structure with high breakdown voltage will be gained. By exploring the mechanism of p-type gate E-HEMT, studying the effects of material design and device design, and considering device fabrication and process optimization, novel GaN based E-HEMTs with high threshold-voltage will be achieved. Last, the main reliability issues of GaN based power devices will be researched and the corresponding improvement techniques will be proposed and verified. By the study of this project, tons of theory and technology achievements will be obtained, which contribute greatly to the development of GaN based power devices in China.
英文关键词: GaN;power devices;fundamental issues