基于复合材料的IG模式可控被动调Q微片激光器研究

项目名称： 基于复合材料的IG模式可控被动调Q微片激光器研究

项目编号： No.61475130

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 董俊

作者单位： 厦门大学

项目金额： 80万元

中文摘要： Ince-Gaussian（IG）激光在生物分子操控、光学漩涡阵列、材料结构微观分析与重组等方面有非常广阔的应用潜力。本项目拟通过开展基于掺Nd3+离子晶体与Cr4+:YAG晶体的复合晶体的理论设计、制备及性能研究，获得实现高光学转换效率、高峰值功率、IG 模式可控微片激光器所需的复合激光晶体的掺杂浓度、晶片厚度等关键参数。系统研究激光二极管泵浦光的光斑形状、大小、入射角度与光强对复合激光晶体被动调Q微片激光器直接产生IG模式可控激光输出的影响，解决复合晶体微片激光器直接产生IG模式可控激光输出的关键问题。结合复合激光晶体中Nd3+离子和Cr4+离子掺杂浓度、厚度配比与IG模式激光输出之间的内在联系，利用傍轴波动光学方程，从理论上揭示被动调Q微片激光器直接产生IG模式激光输出的物理机制。为今后推动基于复合材料的高光学转换效率、高峰值功率、IG模式可控微片激光器的发展提供理论依据和实验数据。

中文关键词： 微片激光器；被动调Q；复合材料；Ince-Gaussian模式；激光技术

英文摘要： Ince-Gaussian (IG) laser beam has been widely used in molecular manipulation, formation of optical vortex, material microstructure analyzation and reconstruction. Theoretical design, fabrication and performance of composite crystals based on Nd3+ ions doped crystals and Cr4+:YAG crystal are proposed in this project. The key parameters of concentration, thickness of Nd3+ ions doped crystals and Cr4+:YAG crystal in composite crystals will be investigated for constructing highly efficient, high peak power, IG modes controllable passively Q-switched microchip lasers. The effects of pump beam shape, beam diameter, incident angle and incident pump intensity of laser-diode on the direct generation of the tailored IG modes in passively Q-switched microchip lasers based on composite crystals will be systematically studied. The key issues of direct generation of IG mode in composite crystal passively Q-switched microchip lasers are addressed. Based on the relationship between IG modes generation and the concentration of Nd3+ ions and Cr4+ ions in the composite crystals, the ratio of the Nd3+ ions doped crystal to the Cr4+:YAG crystal, the mechanics of direct generation of IG modes in composite crystal passively Q-switched microchip lasers is given by applying the paraxial wave equation in elliptic coordinates. The investigation will provides a solid foundation on theory and experimental data for developing highly efficient, high peak power, IG modes controllable passively Q-switched microchip lasers based on composite crystals.

英文关键词： Microchip lasers;Passively Q-switched;Composite materials;IG mode;Laser technology