面向空间应用功率VDMOS器件单粒子辐射损伤机理研究

项目名称： 面向空间应用功率VDMOS器件单粒子辐射损伤机理研究

项目编号： No.61204110

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 高博

作者单位： 中国科学院微电子研究所

项目金额： 25万元

中文摘要： 功率VDMOS器件由于具有输入阻抗高、驱动功率低、开关速度快等优点，在航空航天领域有着广泛的应用前景。然而，空间辐射环境作用于功率VDMOS器件时造成的辐射损伤会导致器件性能退化甚至失效，尤其作为航天器中的二次电源功率开关，器件性能退化直接影响DC-DC的可靠性，严重时可能导致航天任务的失败。 本项目针对空间辐射环境下由于功率VDMOS器件辐射损伤引起的卫星寿命、性能、可靠性降低等问题，开展功率VDMOS器件辐射损伤机理及模拟仿真技术的研究。通过对功率VDMOS器件进行单粒子辐照实验，获得器件辐射损伤的响应规律，提取器件辐射损伤时安全阈值的实验条件，探究器件发生SEB、SEGR时的敏感区域及相关性，结合实验结果和模拟仿真技术，揭示器件单粒子辐射损伤机理，建立单粒子辐射损伤物理模型。 本项目的成功实施有助于了解功率VDMOS器件单粒子辐射损伤机理，同时为发展器件的抗辐射加固技术奠定理论基础。

中文关键词： 功率VDMOS；单粒子效应；单粒子烧毁；单粒子栅穿；

英文摘要： Power VDMOS devices have extensive application in the field of aerospace because of its high input impedance, low drive power and fast switching speed. However, when power VDMOS devices are exposed to space radiation environment, the radiation damage can lead the devices' performance degradation even catastrophic failure. As power switch of the secondary power supply in the spacecraft, the degradation of power VDMOS devices performance directly affect the reliability of the DC-DC converter and in severe cases it may lead to the failure of space missions. The research of radiation damage mechanism and simulation technology of power VDMOS devices will be carried out, aiming at the problems due to power VDMOS devices radiation damage caused the reduction of satellites' lifetime, perfomence and reliability. Through the single event irradiation experiment of power VDMOS devices, the response law and the exprimental conditon of minimum safety threshold of radiation damage will be extracted, the sensitive area of SEB & SEGR and their correlation will be explored. Finally, combined with the experimental results and simulation technology, the single event radiation damage mechanisms will be revealed and the single particle radiation damage physical models will be established. The successful implementation of this projec

英文关键词： power VDMOS；single event effects；single event burnout；single event rupture；